# STD5NM50T4-VB

**VBsemi Elec** · MOSFETs · TO-252

STD5NM50T4-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±30 V per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal (also the heat-sinking tab); drain-source voltage is rated 650 V and junction-to-case thermal resistance is 0.6 °C/W maximum. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the integral body diode has a maximum forward voltage VSD of 1.5 V at IS = 4 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 650 | V |  | 1 |
| Gate-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering Recommendations (Peak Temperature) |  |  |  | 300 | °C | for 10 s | 1 |
| Maximum Junction-to-Ambient | RthJA |  |  | 63 | °C/W |  | 2 |
| Maximum Junction-to-Case (Drain) | RthJC |  |  | 0.6 | °C/W |  | 2 |
| Drain-Source Breakdown Voltage | VDS | 650 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage (N) | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±20 V | 2 |
| Gate-Source Leakage | IGSS | -1 |  | 1 | μA | VGS = ±30 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 650 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 |
| Diode Forward Voltage | VSD |  |  | 1.5 | V | TJ = 25 °C, IS = 4 A, VGS = 0 V | 2 |

## CAD (KiCad official)

- Symbol: `STD5NM50T4-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `std5nm50t4-vb-etched.step` / `std5nm50t4-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `std5nm50t4-vb.step` / `std5nm50t4-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/std5nm50t4-vb-datasheet.pdf) (8 pp, sha256 `6e85733fa61d84a2`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/std5nm50t4-vb-datasheet.pdf)