STD4NK60ZT4

{
  "schema_version": 1,
  "type": "component",
  "slug": "std4nk60zt4",
  "title": "STD4NK60ZT4",
  "brief": "STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "std4nk60zt4",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "STD4NK60ZT4",
    "manufacturer": "STMicroelectronics",
    "package": "DPAK",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://www.st.com/resource/en/datasheet/std4nk60zt4.pdf",
    "parts": {
      "symbol": "std4nk60zt4.kicad_sym",
      "footprint": "std4nk60zt4.kicad_mod",
      "model_3d": "std4nk60zt4-etched.glb",
      "model_3d_plain": "std4nk60zt4.glb",
      "model_3d_step": "std4nk60zt4-etched.step",
      "model_3d_step_plain": "std4nk60zt4.step",
      "lbr": "std4nk60zt4.lbr"
    },
    "distributor_links": {
      "lcsc": "C411399"
    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate control input with ±30V maximum voltage, 3.00-4.50V threshold voltage, and ±10µA maximum gate-source leakage current."
      },
      {
        "number": "2",
        "name": "D",
        "type": "output",
        "description": "Drain terminal with 600V maximum voltage, 4A continuous current at 25°C (2.5A at 100°C), and 2Ω maximum on-resistance at VGS=10V and ID=2A."
      },
      {
        "number": "3",
        "name": "S",
        "type": "power_in",
        "description": "Source terminal and body diode cathode providing gate-source reference with 4A continuous current diode rating and 1.6V maximum forward voltage drop."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.2",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.2",
        "primary_model": "claude-haiku-4-5-20251001",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [],
        "pages_sent": 18,
        "cost_usd": 0.1279,
        "at": "2026-09-23T07:24:23"
      },
      "datasheet": {
        "url": "https://www.st.com/resource/en/datasheet/std4nk60zt4.pdf",
        "pages": 18,
        "sha256": "9ecf94526d1f2463",
        "source_tier": "mfr"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "std4nk60zt4.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          9.9,
          6.5,
          2.32
        ],
        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "std4nk60zt4-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          9.9,
          6.5,
          2.32
        ],
        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "43549b57cf50cd715f33ff759ea2f30804901048dc9f8a4e126ced884a76bd1c",
        "checked": "2026-10-16",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "DPAK",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "9ecf94526d1f2463",
      "rows": [
        {
          "name": "Drain-source voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 600,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-source voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": 30,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (continuous)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 4,
          "conditions": "TC = 25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (continuous)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 2.5,
          "conditions": "TC = 100 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (pulsed)",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 16,
          "conditions": "Pulse width limited by safe operating area",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Total power dissipation",
          "symbol": "PTOT",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 70,
          "conditions": "TC = 25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-source ESD (human body model)",
          "symbol": "ESD",
          "kind": "absolute_maximum",
          "unit": "kV",
          "min": null,
          "typ": null,
          "max": 3,
          "conditions": "R = 1.5 kΩ, C = 100 pF",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Peak diode recovery voltage slope",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 4.5,
          "conditions": "ISD ≤ 4 A, di/dt ≤ 200 A/µs, VDS(peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Storage temperature range",
          "symbol": "Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction-to-case",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 1.79,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction-to-ambient",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "When mounted on an 1-inch² FR-4, 2 Oz copper board",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Avalanche current, repetitive or not repetitive",
          "symbol": "IAR",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 4,
          "conditions": "Pulse width limited by TJ max.",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 120,
          "conditions": "Starting TJ = 25 °C, ID = IAR, VDD = 50 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 600,
          "typ": null,
          "max": null,
          "conditions": "ID = 1 mA, VGS = 0 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VGS = 0 V, VDS = 600 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "VGS = 0 V, VDS = 600 V, TC = 125 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate body leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "µA",
          "min": -10,
          "typ": null,
          "max": 10,
          "conditions": "VGS = ±20 V, VDS = 0 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 3,
          "typ": 3.75,
          "max": 4.5,
          "conditions": "VDS = VGS, ID = 50 µA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Static drain-source on-resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 1.7,
          "max": 2,
          "conditions": "VGS = 10 V, ID = 2 A",
          "source_page": 3,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "std4nk60zt4"
  ],
  "discovery_pitch": "STD4NK60ZT4 (STMicroelectronics) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "std4nk60zt4.kicad_sym",
    "std4nk60zt4.kicad_mod",
    "std4nk60zt4.glb",
    "std4nk60zt4.step",
    "std4nk60zt4.lbr",
    "docs/hero.png",
    "docs/std4nk60zt4-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html"
  ],
  "visibility": {
    "public": true
  },
  "updated_at": "2026-09-25T08:33:06.169Z"
}