component
STD4NK60Z-1
Public Made by Adomby adom
STMicroelectronics MOSFETs, IPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STD4NK60Z-1
STMicroelectronics · MOSFETs · IPAK
STD4NK60Z-1 from STMicroelectronics, in a IPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the Zener-protected SuperMESH N-channel MOSFET; the absolute maximum gate-source voltage is ±30 V (VGS). |
| 2 | D | passive | Drain, also connected to the metal TAB; the absolute maximum drain-source voltage is 600 V and the continuous drain current is 4 A at TC = 25 °C. |
| 3 | S | passive | Source of the MOSFET; the source-drain diode forward current is 4 A continuous and 16 A pulsed (ISDM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | IPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
STD4NK60Z-1 - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: IPAK (KiCad packages3D, STEP)
- 3D model files:
std4nk60z-1-etched.step/std4nk60z-1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);std4nk60z-1.step/std4nk60z-1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (12 pp, sha256
a357df139a189a7f, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STD4NK60Z-1
**STMicroelectronics** · MOSFETs · IPAK
STD4NK60Z-1 from STMicroelectronics, in a IPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the Zener-protected SuperMESH N-channel MOSFET; the absolute maximum gate-source voltage is ±30 V (VGS). |
| 2 | D | passive | Drain, also connected to the metal TAB; the absolute maximum drain-source voltage is 600 V and the continuous drain current is 4 A at TC = 25 °C. |
| 3 | S | passive | Source of the MOSFET; the source-drain diode forward current is 4 A continuous and 16 A pulsed (ISDM). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | IPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `STD4NK60Z-1`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: IPAK (KiCad packages3D, STEP)
- 3D model files: `std4nk60z-1-etched.step` / `std4nk60z-1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `std4nk60z-1.step` / `std4nk60z-1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/std4nk60z-1.pdf) (12 pp, sha256 `a357df139a189a7f`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/std4nk60z-1-datasheet.pdf)