component
STD3N95K5AG
Public Made by Adomby adom
STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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std3n95k5ag: specified limits as data (metadata.characteristics, 28 rows from the datasheet)
2 files changed
+379−1
README.md+35@@ -21,6 +21,41 @@ STD3N95K5AG from STMicroelectronics, in a DPAK. Pinout and pin descriptions extr | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-source voltage | VGS | -30 | | 30 | V | | 2 |+| Drain current (continuous) at TC = 25 °C | ID | | | 2 | A | TC = 25 °C | 2 |+| Drain current (continuous) at TC = 100 °C | ID | | | 1.3 | A | TC = 100 °C | 2 |+| Drain current pulsed | IDM | | | 3 | A | Pulse width limited by safe operating area | 2 |+| Total power dissipation at TC = 25 °C | PTOT | | | 45 | W | TC = 25 °C | 2 |+| Peak diode recovery voltage slope | dv/dt | | | 4.5 | V/ns | ISD ≤ 2 A, di/dt ≤ 100 A/μs, VDS (peak) ≤ V(BR)DSS | 2 |+| MOSFET dv/dt ruggedness | dv/dt | | | 50 | V/ns | VDS ≤ 760 V | 2 |+| Operating junction temperature range | Tj | -55 | | 150 | °C | | 2 |+| Thermal resistance, junction-to-case | RthJC | | | 2.78 | °C/W | | 2 |+| Thermal resistance, junction-to-board | RthJB | | | 50 | °C/W | When mounted on 1 inch² FR-4, 2 Oz copper board | 2 |+| Avalanche current, repetitive or not repetitive | IAR | | | 1 | A | Pulse width limited by TJ max. | 2 |+| Single pulse avalanche energy | EAS | | | 50 | mJ | Starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 |+| Drain-source breakdown voltage | V(BR)DSS | 950 | | | V | VGS = 0 V, ID = 1 mA | 3 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS = 950 V, VGS = 0 V | 3 |+| Zero gate voltage drain current (TC = 125 °C, defined by design) | IDSS | | | 50 | µA | VDS = 950 V, VGS = 0 V, TC = 125 °C | 3 |+| Gate body leakage current | IGSS | -10 | | 10 | µA | VGS = ±20 V, VDS = 0 V | 3 |+| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 100 µA | 3 |+| Static drain-source on-resistance | RDS(on) | | 4.3 | 5 | Ω | VGS = 10 V, ID = 1 A | 3 |+| Source-drain current | ISD | | | 2 | A | | 4 |+| Source-drain current (pulsed) | ISDM | | | 3 | A | Pulse width limited by safe operating area | 4 |+| Forward on voltage | VSD | | | 1.5 | V | ISD = 2 A, VGS = 0 V (pulsed: pulse duration = 300 µs, duty cycle 1.5%) | 4 |+| Reverse recovery time | trr | | | 300 | ns | ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V | 4 |+| Reverse recovery charge | Qrr | | | 1.15 | µC | ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V | 4 |+| Reverse recovery current | IRRM | | | 7.6 | A | ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V | 4 |+| Reverse recovery time (TJ = 150 °C) | trr | | | 525 | ns | ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 |+| Reverse recovery charge (TJ = 150 °C) | Qrr | | | 1.9 | µC | ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 |+| Reverse recovery current (TJ = 150 °C) | IRRM | | | 7.2 | A | ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 |+| Gate-source breakdown voltage | V(BR)GSO | -30 | | 30 | V | IGS = ±1 mA, ID = 0 A | 4 |+ ## CAD (KiCad official) - Symbol: `STD3N95K5AG`
page.json+344−1@@ -150,6 +150,349 @@ "Package": "DPAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "80bddfb7f81c41f0",+ "rows": [+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous) at TC = 25 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous) at TC = 100 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "TC = 100 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation at TC = 25 °C",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "ISD ≤ 2 A, di/dt ≤ 100 A/μs, VDS (peak) ≤ V(BR)DSS",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "MOSFET dv/dt ruggedness",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VDS ≤ 760 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 2.78,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-board",+ "symbol": "RthJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "When mounted on 1 inch² FR-4, 2 Oz copper board",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, repetitive or not repetitive",+ "symbol": "IAR",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Pulse width limited by TJ max.",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "electrical",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "Starting TJ = 25 °C, ID = IAR, VDD = 50 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 950,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 1 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 950 V, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (TC = 125 °C, defined by design)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VDS = 950 V, VGS = 0 V, TC = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VGS = ±20 V, VDS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 3,+ "typ": 4,+ "max": 5,+ "conditions": "VDS = VGS, ID = 100 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 4.3,+ "max": 5,+ "conditions": "VGS = 10 V, ID = 1 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "ISD = 2 A, VGS = 0 V (pulsed: pulse duration = 300 µs, duty cycle 1.5%)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "µC",+ "min": null,+ "typ": null,+ "max": 1.15,+ "conditions": "ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7.6,+ "conditions": "ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time (TJ = 150 °C)",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 525,+ "conditions": "ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge (TJ = 150 °C)",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "µC",+ "min": null,+ "typ": null,+ "max": 1.9,+ "conditions": "ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current (TJ = 150 °C)",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7.2,+ "conditions": "ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-source breakdown voltage",+ "symbol": "V(BR)GSO",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "IGS = ±1 mA, ID = 0 A",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +534,4 @@ "visibility": { "public": true }-}+}