Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

STD35NF06L

UMW · MOSFETs · TO-252

STD35NF06L from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with VGS rated ±20V maximum and threshold VGS(th) of 2 to 3V (typ range as printed) at IDS=250µA.
2 D passive Drain; rated for VDS of 60V and continuous drain current of 35A at TC=25°C.
3 S passive Source; current return terminal of the N-channel MOSFET, with RDS(ON) below 12mΩ at VGS=10V.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, IDS=250µA 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS=60V, VGS=0V 3
Gate-Body Leakage IGSS -100 100 nA VGS=±20V, VDS=0V 3
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, IDS=250µA 3
Drain-Source On-State Resistance RDS(ON) 12 mΩ VGS=10V, IDS=30A 3
Drain-Source On-State Resistance RDS(ON) 16 mΩ VGS=4.5V, IDS=20A 3
Drain-Source Diode Forward Voltage VSD 1.5 V VGS=0V, IDS=35A 4
Drain-Source Voltage VDS 60 V TA=25°C 1
Gate-Source Voltage VGS -20 20 V TA=25°C 1
Drain Current-Continuous ID 35 A TC=25°C 1
Drain Current-Continuous ID 25 A TC=100°C 1
Drain Current-Pulsed IDM 140 A TA=25°C 1
Avalanche Energy EAS 72 mJ L=0.5mH,VDD=10V, VG=10V, VGATE=20V,Start TJ=25°C 1
Maximum Power Dissipation PD 105 W TC=25°C 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Thermal Resistance, Junction-to-Case RthJC 1.4 °C/W 2
Input Capacitance Ciss 1300 pF VDS=25V, VGS=0V, f=1MHz 3
Output Capacitance Coss 300 pF VDS=25V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance Crss 105 pF VDS=25V, VGS=0V, f=1MHz 3
Turn-On Delay Time tD(on) 20 ns VGS=10V, VDS=30V, RGEN=4.7Ω, ID=27.5A 3
Rise Time tr 50 ns VGS=10V, VDS=30V, RGEN=4.7Ω, ID=27.5A 3
Turn-Off Delay Time tD(off) 36 ns VGS=10V, VDS=30V, RGEN=4.7Ω, ID=27.5A 3
Fall Time tf 15 ns VGS=10V, VDS=30V, RGEN=4.7Ω, ID=27.5A 3
Total Gate Charge at 10V Qg 44.5 nC VDS=30V, IDS=55A, VGS=10V 3
Gate to Source Gate Charge Qgs 10.5 nC VDS=30V, IDS=55A, VGS=10V 3
Gate to Drain Miller Charge Qgd 17.5 nC VDS=30V, IDS=55A, VGS=10V 3
Reverse Recovery Time trr 75 nS TJ=25°C, IF=25A, dI/dt=100A/μs 4
Reverse Recovery Charge Qrr 170 uC TJ=25°C, IF=25A, dI/dt=100A/μs 4

CAD (KiCad official)

  • Symbol: STD35NF06L
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: std35nf06l-etched.step / std35nf06l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std35nf06l.step / std35nf06l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 7cbfe1c6a42b6f75, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF