# STD2HNK60Z-1

**STMicroelectronics** · MOSFETs · IPAK

STD2HNK60Z-1 from STMicroelectronics, in a IPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, Zener-protected against ESD (VGS max ±30 V, gate-source ESD HBM 2000 V); threshold VGS(th) 3 V min to 4.5 V max at ID = 50 µA. |
| 2 | D | passive | Drain, rated for VDS 600 V and continuous ID 2.0 A at TC = 25 °C (8 A pulsed). |
| 3 | S | passive | Source, the current return terminal of the N-channel MOSFET, with continuous source-drain diode current ISD of 2 A (8 A pulsed). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | IPAK |
| Category | Transistors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `STD2HNK60Z-1`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: IPAK (KiCad packages3D, STEP)
- 3D model files: `std2hnk60z-1-etched.step` / `std2hnk60z-1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `std2hnk60z-1.step` / `std2hnk60z-1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/std2hnk60z-1.pdf) (22 pp, sha256 `c08c5717b962c2aa`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/std2hnk60z-1-datasheet.pdf)