STD25N10F7-VB

{
  "schema_version": 1,
  "type": "component",
  "slug": "std25n10f7-vb",
  "title": "STD25N10F7-VB",
  "brief": "VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "std25n10f7-vb"
  ],
  "component": {
    "mpn": "STD25N10F7-VB",
    "manufacturer": "VBsemi Elec",
    "package": "TO-252",
    "pin_count": 4,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609148997924118528",
    "parts": {
      "symbol": "std25n10f7-vb.kicad_sym",
      "footprint": "std25n10f7-vb.kicad_mod",
      "model_3d": "std25n10f7-vb-etched.glb",
      "model_3d_plain": "std25n10f7-vb.glb",
      "model_3d_step": "std25n10f7-vb-etched.step",
      "model_3d_step_plain": "std25n10f7-vb.step",
      "lbr": "std25n10f7-vb.lbr"
    },
    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Insulated gate of the N-channel MOSFET; VGS(th) = 1-3 V, VGS abs max = ±20 V. Drives the channel between drain and source."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain. High-side power terminal of the N-channel MOSFET; VDS abs max = 100 V, continuous ID = 40 A at TC = 25 °C. Electrically connected to the exposed tab of the TO-252 package."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source. Low-side power terminal of the N-channel MOSFET; internally tied to the anode of the body diode (VSD ≈ 1.0 V @ IF = 30 A). Continuous source current IS = 40 A."
      },
      {
        "number": "4",
        "name": "D",
        "type": "passive",
        "description": "Drain tab. Exposed thermal/electrical tab of the TO-252 package, electrically identical to pin 2 (drain). Provides the primary thermal path (RthJC = 1.4 °C/W)."
      }
    ],
    "provenance": {
      "extractor": "ds2sf",
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609148997924118528",
        "pages": null,
        "sha256": "0a7978a82c45eee7",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 4,
        "described": 4,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    }
  },
  "metadata": {
    "specs": {
      "Manufacturer": "VBsemi Elec",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "4"
    }
  },
  "variants": [
    {
      "mpn": "STD25N10F7-VB",
      "kind": "packaging"
    }
  ],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "std25n10f7-vb"
  ],
  "discovery_pitch": "STD25N10F7-VB (VBsemi Elec) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "std25n10f7-vb.kicad_sym",
    "std25n10f7-vb.kicad_mod",
    "std25n10f7-vb.glb",
    "std25n10f7-vb.step",
    "std25n10f7-vb.lbr",
    "docs/hero.png",
    "docs/std25n10f7-vb-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html"
  ],
  "visibility": {
    "public": true
  },
  "updated_at": "2026-09-25T08:32:13.528Z"
}