# STD20NF06L-HXY

**HXY MOSFET** · MOSFETs · TO-252-2L

STD20NF06L-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet gives the gate-source voltage absolute maximum as ±20 V. |
| 2 | D | passive | Drain terminal; the datasheet rates the drain-source voltage at 60 V and continuous drain current at 20 A at TC=25℃. |
| 3 | S | passive | Source terminal; the datasheet rates the continuous source current at 20 A at TC=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 20 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | 10 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 80 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 38 | mJ |  | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 34.7 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Gate-Body Leakage Current | lGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Zero Gate Voltage Drain Current (TJ=25°C) | IDSS |  |  | 1 | μA | VDS = 60V, VGS = 0V, TJ=25°C | 2 |
| Zero Gate Voltage Drain Current (TJ=100°C) | IDSS |  |  | 100 | μA | VDS = 60V, VGS = 0V, TJ=100°C | 2 |
| Gate-Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source on-Resistance | RDS(on) |  | 25 | 32 | mΩ | VGS = 10V, ID = 10A | 2 |
| Drain-Source on-Resistance | RDS(on) |  | 31.5 | 40 | mΩ | VGS = 4.5V, ID = 5A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | IS = 10A, VGS = 0V | 2 |
| Continuous Source Current | IS |  |  | 20 | A | TC=25°C | 2 |

## CAD (KiCad official)

- Symbol: `STD20NF06L-HXY`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `std20nf06l-hxy-etched.step` / `std20nf06l-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `std20nf06l-hxy.step` / `std20nf06l-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758122948299907072) (6 pp, sha256 `ef11d72bdc90b136`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/std20nf06l-hxy-datasheet.pdf)