component

STD1NK80ZT4

Public Made by Adom

by adom

STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstd1nk80zt4factory-2.0.0extractor-text

Verified STD1NK80ZT4

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: STD1NK80ZT4 · DPAK · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 15-page datasheet
  • ✓distributor: lcsc C377961, digikey 497-4751-2-ND, mouser 511-STD1NK80ZT4
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-1qp_bv8d/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ std1nk80zt4.kicad_sym✓ std1nk80zt4.kicad_mod✓ std1nk80zt4.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 21h ago
viewers std1nk80zt4: viewers · Ray 21h ago
package.json Publish 0.1.0 · Ray 21h ago
page.json Set visibility: public · Ray 21h ago
README.md Publish 0.1.0 · Ray 21h ago
std1nk80zt4-etched.glb Publish 0.1.0 · Ray 21h ago
std1nk80zt4-etched.step std1nk80zt4: factory component page (tier=mfr) · Ray 21h ago
std1nk80zt4-hero.glb std1nk80zt4: hero GLB from the etched model (keeps the MPN mark) · Ray 21h ago
std1nk80zt4-hero.overlay.json Publish 0.1.0 · Ray 21h ago
std1nk80zt4.glb Publish 0.1.0 · Ray 21h ago
std1nk80zt4.kicad_mod Publish 0.1.0 · Ray 21h ago
std1nk80zt4.kicad_sym Publish 0.1.0 · Ray 21h ago
std1nk80zt4.lbr Publish 0.1.0 · Ray 21h ago
std1nk80zt4.step Publish 0.1.0 · Ray 21h ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 21h ago

STD1NK80ZT4

STMicroelectronics · MOSFETs · DPAK

STD1NK80ZT4 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the Zener-protected N-channel MOSFET, with gate-source voltage limited to ±30 V per Table 1.
2 D passive Drain of the N-channel MOSFET, also connected to the TAB, with drain-source voltage rated at 800 V per Table 1.
3 S passive Source of the N-channel MOSFET, with continuous source-drain current limited to 1 A per Table 7.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package DPAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 800 V 2
Gate-source voltage VGS -30 30 V 2
Drain current (continuous) ID 1 A Drain current (continuous) at TC = 25 °C 2
Drain current (continuous) ID 0.63 A Drain current (continuous) at TC = 100 °C 2
Drain current (pulsed) IDM 5 A Pulse width limited by safe operating area 2
Total power dissipation PTOT 45 W Total power dissipation at TC = 25 °C 2
Gate-source human body model ESD ESD 1 kV Gate-source human body model (R = 1.5 kΩ, C = 100 pF) 2
Peak diode recovery voltage slope dv/dt 4.5 V/ns ISD ≤ 1 A, di/dt ≤ 200 A/μs, VDS (peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS 2
Storage temperature range Tstg -55 150 °C Storage temperature range 2
Thermal resistance, junction-to-case RthJC 2.78 °C/W 2
Thermal resistance, junction-to-ambient RthJA 50 °C/W When mounted on 1 inch² FR-4, 2 Oz copper board 2
Avalanche current, repetitive or not repetitive IAR 1 A Pulse width limited by TJ max. 2
Single pulse avalanche energy EAS 50 mJ Starting TJ = 25 °C, ID = IAR, VDD = 50 V 2
Drain-source breakdown voltage V(BR)DSS 800 V VGS = 0 V, ID = 1 mA 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 800 V 3
Zero gate voltage drain current IDSS 50 µA VGS = 0 V, VDS = 800 V, TC = 125 °C 3
Gate body leakage current IGSS -10 10 µA VDS = 0 V, VGS = ±20 V 3
Gate threshold voltage VGS(th) 3 3.8 4.5 V VDS = VGS, ID = 50 µA 3
Static drain-source on-resistance RDS(on) 13 16 Ω VGS = 10 V, ID = 0.5 A 3
Source-drain current ISD 1 A 4
Source-drain current (pulsed) ISDM 5 A 4
Forward on voltage VSD 1.6 V ISD = 1 A, VGS = 0 V 4
Reverse recovery time trr 365 ns ISD = 1.1 A, di/dt = 100 A/µs, VDD = 50 V 4
Reverse recovery charge Qrr 802 nC ISD = 1.1 A, di/dt = 100 A/µs, VDD = 50 V 4
Reverse recovery current IRRM 4.4 A ISD = 1.1 A, di/dt = 100 A/µs, VDD = 50 V 4
Reverse recovery time trr 389 ns ISD = 1.1 A, di/dt = 100 A/µs, VDD = 50 V, TJ = 150 °C 4
Reverse recovery charge Qrr 891 nC ISD = 1.1 A, di/dt = 100 A/µs, VDD = 50 V, TJ = 150 °C 4
Reverse recovery current IRRM 4.6 A ISD = 1.1 A, di/dt = 100 A/µs, VDD = 50 V, TJ = 150 °C 4
Input capacitance Ciss 160 pF VDS = 25 V, f = 1 MHz, VGS = 0 V 3
Output capacitance Coss 26 pF VDS = 25 V, f = 1 MHz, VGS = 0 V 3
Reverse transfer capacitance Crss 6.7 pF VDS = 25 V, f = 1 MHz, VGS = 0 V 3
Equivalent output capacitance Coss eq. 9.5 pF VGS = 0 V, VDS = 0 to 640 V 3
Total gate charge Qg 7.7 nC VDD = 640, ID = 1.1 A, VGS = 0 to 10 V 3
Gate-source charge Qgs 1.4 nC VDD = 640, ID = 1.1 A, VGS = 0 to 10 V 3
Gate-drain charge Qgd 4.5 nC VDD = 640, ID = 1.1 A, VGS = 0 to 10 V 3
Turn-on delay time td(on) 7 ns VDD = 400 V, ID = 0.55 A, RG = 4.7 Ω, VGS = 10 V 3
Rise time tr 23 ns VDD = 400 V, ID = 0.55 A, RG = 4.7 Ω, VGS = 10 V 3
Turn-off delay time td(off) 18 ns VDD = 400 V, ID = 0.55 A, RG = 4.7 Ω, VGS = 10 V 3
Fall time tf 28 ns VDD = 400 V, ID = 0.55 A, RG = 4.7 Ω, VGS = 10 V 3

CAD (KiCad official)

  • Symbol: STD1NK80ZT4
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: std1nk80zt4-etched.step / std1nk80zt4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std1nk80zt4.step / std1nk80zt4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (15 pp, sha256 458d0636e8f391ae, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF