component
STD1NK60T4
Public Made by Adomby adom
STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+39@@ -0,0 +1,39 @@+# STD1NK60T4++**STMicroelectronics** · MOSFETs · DPAK++STD1NK60T4 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | Gate | input | Gate control terminal with absolute maximum gate-source voltage rating of ±30 V; gate threshold voltage 2.25-3.7 V at ID = 250 µA; gate-body leakage current ±100 nA at VDS = 0 V, VGS = ±30 V. |+| 2 | Drain | bidirectional | Drain terminal with maximum drain-source voltage 600 V, drain-source breakdown voltage 600 V at ID = 1 mA; continuous drain current 1.0 A at TC = 25 °C and 0.63 A at TC = 100 °C; pulsed drain current 4 A; connected to thermal tab for heat dissipation. |+| 3 | Source | bidirectional | Source terminal and intrinsic diode cathode; source-drain diode forward voltage 1.6 V at ISD = 1.0 A with reverse recovery time 140 ns at TJ = 25 °C; reverse recovery current 3.3 A. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | STMicroelectronics |+| Package | DPAK |+| Category | Transistors/Thyristors |+| Pins | 3 |++## CAD (KiCad official)++- Symbol: `STD1NK60T4`+- Footprint: `Package_TO_SOT_SMD:TO-252-2`+- 3D model: DPAK (KiCad packages3D, STEP)+- 3D model files: `std1nk60t4-etched.step` / `std1nk60t4-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `std1nk60t4.step` / `std1nk60t4.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/std1nk60t4.pdf) (19 pp, sha256 `5fa21f83526f2245`, retrieved 2026-09-24, tier: manufacturer)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/std1nk60t4-datasheet.pdf)
page.jsonadded+113@@ -0,0 +1,113 @@+{+ "slug": "std1nk60t4",+ "version": "0.1.0",+ "type": "component",+ "description": "STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "tags": [+ "component",+ "transistors-thyristors",+ "std1nk60t4",+ "factory-2.0.0",+ "extractor-text"+ ],+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "std1nk60t4.kicad_sym",+ "std1nk60t4.kicad_mod",+ "std1nk60t4.glb",+ "std1nk60t4.step",+ "std1nk60t4.lbr",+ "docs/hero.png",+ "docs/std1nk60t4-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html"+ ],+ "component": {+ "mpn": "STD1NK60T4",+ "manufacturer": "STMicroelectronics",+ "package": "DPAK",+ "pin_count": 3,+ "category": "Transistors/Thyristors",+ "subcategory": "MOSFETs",+ "datasheet": "https://www.st.com/resource/en/datasheet/std1nk60t4.pdf",+ "parts": {+ "symbol": "std1nk60t4.kicad_sym",+ "footprint": "std1nk60t4.kicad_mod",+ "model_3d": "std1nk60t4-etched.glb",+ "model_3d_plain": "std1nk60t4.glb",+ "model_3d_step": "std1nk60t4-etched.step",+ "model_3d_step_plain": "std1nk60t4.step",+ "lbr": "std1nk60t4.lbr"+ },+ "distributor_links": {+ "lcsc": "C361030"+ },+ "pins": [+ {+ "number": "1",+ "name": "Gate",+ "type": "input",+ "description": "Gate control terminal with absolute maximum gate-source voltage rating of ±30 V; gate threshold voltage 2.25-3.7 V at ID = 250 µA; gate-body leakage current ±100 nA at VDS = 0 V, VGS = ±30 V."+ },+ {+ "number": "2",+ "name": "Drain",+ "type": "bidirectional",+ "description": "Drain terminal with maximum drain-source voltage 600 V, drain-source breakdown voltage 600 V at ID = 1 mA; continuous drain current 1.0 A at TC = 25 °C and 0.63 A at TC = 100 °C; pulsed drain current 4 A; connected to thermal tab for heat dissipation."+ },+ {+ "number": "3",+ "name": "Source",+ "type": "bidirectional",+ "description": "Source terminal and intrinsic diode cathode; source-drain diode forward voltage 1.6 V at ISD = 1.0 A with reverse recovery time 140 ns at TJ = 25 °C; reverse recovery current 3.3 A."+ }+ ],+ "provenance": {+ "extractor": "extract_pins 0.2",+ "factory_chain": {+ "factory": "2.0.0",+ "extractor": "extract_pins 0.2",+ "primary_model": "claude-haiku-4-5-20251001",+ "primary_mode": "text",+ "consensus_model": "claude-sonnet-5",+ "consensus": "agreed",+ "guards": "pin_guards 0.1: passed",+ "guard_notes": [+ "extractor flagged: Datasheet documents both DPAK Type A (page 10) and DPAK Type C (page 13) package variants; both shar"+ ],+ "pages_sent": 19,+ "cost_usd": 0.1097,+ "at": "2026-09-24T10:03:40"+ },+ "datasheet": {+ "url": "https://www.st.com/resource/en/datasheet/std1nk60t4.pdf",+ "pages": 19,+ "sha256": "5fa21f83526f2245",+ "source_tier": "mfr"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 3,+ "described": 3,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "visibility": "public",+ "org": "adom",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }+}