component
STD17NF03LT4
Public Made by Adomby adom
STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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std17nf03lt4: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+339
README.md+32@@ -21,6 +21,38 @@ STD17NF03LT4 from STMicroelectronics, in a DPAK. Pinout and pin descriptions ext | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage (VGS = 0) | VDS | | | 30 | V | VGS = 0 | 3 |+| Drain-gate voltage | VDGR | | | 30 | V | RGS = 20 kΩ | 3 |+| Gate-source voltage | VGS | -16 | | 16 | V | | 3 |+| Drain current (continuous) at TC = 25°C | ID | | | 17 | A | TC = 25°C | 3 |+| Drain current (continuous) at TC = 100°C | ID | | | 12 | A | TC = 100°C | 3 |+| Drain current (pulsed) | IDM | | | 68 | A | Pulse width limited by safe operating area | 3 |+| Total dissipation at TC = 25°C | Ptot | | | 30 | W | TC = 25°C | 3 |+| Derating factor | | | | 0.2 | W/°C | | 3 |+| Peak diode recovery avalanche energy | dv/dt | | | 7 | V/ns | ISD ≤17A, di/dt ≤300A/µs, VDD =V(BR)DSS, Tj ≤ TJMAX | 3 |+| Single pulse avalanche energy | EAS | | | 200 | mJ | Starting Tj = 25 °C, ID = 8.5A, VDD = 15V | 3 |+| Storage temperature | Tstg | -55 | | 175 | °C | | 3 |+| Thermal resistance junction-case max | Rthj-case | | | 5 | °C/W | | 3 |+| Thermal resistance junction-to ambient max | Rthj-amb | | | 100 | °C/W | | 3 |+| Maximum lead temperature for soldering purpose | TJ | | | 275 | °C | | 3 |+| Drain-source breakdown voltage | V(BR)DSS | 30 | | | V | ID = 250µA, VGS = 0 | 4 |+| Zero gate voltage drain current (VGS = 0) | IDSS | | | 1 | µA | VDS = Max rating | 4 |+| Zero gate voltage drain current (VGS = 0) | IDSS | | | 10 | µA | VDS = Max rating, TC = 125°C | 4 |+| Gate-body leakage current | IGSS | -100 | | 100 | nA | VDS = 0, VGS = ± 16V | 4 |+| Gate threshold voltage | VGS(th) | 1 | 1.5 | 2.2 | V | VDS = VGS, ID = 250µA | 4 |+| Static drain-source on resistance | RDS(on) | | 0.038 | 0.05 | Ω | VGS = 10V, ID = 8.5A | 4 |+| Static drain-source on resistance | RDS(on) | | 0.045 | 0.06 | Ω | VGS = 5V, ID = 8.5A | 4 |+| Total gate charge | Qg | | 4.8 | 6.5 | nC | VDD = 3024V, ID = 17A, VGS = 5V, RG = 4.7Ω (see Figure 14) | 4 |+| Source-drain current | ISD | | | 22 | A | | 5 |+| Source-drain current (pulsed) | ISDM | | | 88 | A | | 5 |+| Forward on voltage | VSD | | | 1.5 | V | ISD = 17A, VGS = 0 | 5 |+ ## CAD (KiCad official) - Symbol: `STD17NF03LT4`
page.json+307@@ -133,6 +133,313 @@ "Package": "DPAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "6dc44ff5ca24c198",+ "rows": [+ {+ "name": "Drain-source voltage (VGS = 0)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "VGS = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-gate voltage",+ "symbol": "VDGR",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "RGS = 20 kΩ",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -16,+ "typ": null,+ "max": 16,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous) at TC = 25°C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 17,+ "conditions": "TC = 25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous) at TC = 100°C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "TC = 100°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 68,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total dissipation at TC = 25°C",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "TC = 25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Derating factor",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/°C",+ "min": null,+ "typ": null,+ "max": 0.2,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery avalanche energy",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 7,+ "conditions": "ISD ≤17A, di/dt ≤300A/µs, VDD =V(BR)DSS, Tj ≤ TJMAX",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "Starting Tj = 25 °C, ID = 8.5A, VDD = 15V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case max",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-to ambient max",+ "symbol": "Rthj-amb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Maximum lead temperature for soldering purpose",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 275,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "ID = 250µA, VGS = 0",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (VGS = 0)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = Max rating",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (VGS = 0)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = Max rating, TC = 125°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0, VGS = ± 16V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.5,+ "max": 2.2,+ "conditions": "VDS = VGS, ID = 250µA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.038,+ "max": 0.05,+ "conditions": "VGS = 10V, ID = 8.5A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.045,+ "max": 0.06,+ "conditions": "VGS = 5V, ID = 8.5A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 4.8,+ "max": 6.5,+ "conditions": "VDD = 3024V, ID = 17A, VGS = 5V, RG = 4.7Ω (see Figure 14)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 22,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 88,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "ISD = 17A, VGS = 0",+ "source_page": 5,+ "source": "datasheet"+ }+ ] } }, "variants": [],