component

STD16NF25

Public Made by Adom

by adom

STMicroelectronics MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstd16nf25factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
std16nf25 / README.md
History Download
Ray std16nf25: specified limits as data (metadata.characteristics, 27 rows from the datasheet) fd8feca 25d ago

STD16NF25

STMicroelectronics · MOSFETs · TO-252-2(DPAK)

STD16NF25 from STMicroelectronics, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input; VGS = ±20 V max, VGS(th) = 2-4 V at ID = 250 µA
2 Drain passive Drain terminal; VDS = 250 V max, ID = 14 A continuous at 25 °C, 8.8 A at 100 °C
3 Source passive Source terminal and reference return for the drain-source channel

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-252-2(DPAK)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate threshold voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250 µA 3
Static drain-source on resistance RDS(on) 195 235 mΩ VGS = 10 V, ID = 6.5 A 3
Drain-source breakdown voltage V(BR)DSS 250 V VGS = 0 V, ID = 1 mA 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 250 V 3
Zero gate voltage drain current (TC = 125 °C) IDSS 10 µA VGS = 0 V, VDS = 250 V, TC = 125 °C 3
Gate-body leakage current IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 3
Source-drain current ISD 14 A 4
Source-drain current (pulsed) ISDM 56 A 4
Forward on voltage VSD 1.6 V ISD = 13 A, VGS = 0 V 4
Reverse recovery time trr 133 ns ISD = 13 A, di/dt = 100 A/µs, VDD = 60 V 4
Reverse recovery charge Qrr 651 nC ISD = 13 A, di/dt = 100 A/µs, VDD = 60 V 4
Reverse recovery current IRRM 10 A ISD = 13 A, di/dt = 100 A/µs, VDD = 60 V 4
Reverse recovery time (TJ = 150 °C) trr 157 ns ISD = 13 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C 4
Reverse recovery charge (TJ = 150 °C) Qrr 895 nC ISD = 13 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C 4
Reverse recovery current (TJ = 150 °C) IRRM 11 A ISD = 13 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C 4
Gate-source voltage VGS -20 20 V 2
Drain-source voltage VDS 250 V 2
Drain current (continuous) ID 14 A TC = 25 °C 2
Drain current (continuous) ID 8.8 A TC = 100 °C 2
Drain current (pulsed) IDM 56 A Pulse width limited by safe operating area 2
Total power dissipation PTOT 85 W TC = 25 °C 2
Peak diode recovery voltage slope dv/dt 15 V/ns ISD ≤ 14 A, di/dt ≤ 300 A/µs, VDD = 80% V(BR)DSS 2
Storage temperature range Tstg -55 150 °C 2
Avalanche current, repetitive or non-repetitive IAR 13 A Pulse width limited by TJ max. 2
Single pulse avalanche energy EAS 100 mJ Starting TJ = 25 °C, ID = IAR, VDD = 50 V 2
Thermal resistance, junction-to-case RthJC 1.47 °C/W 2
Thermal resistance, junction-to-ambient RthJA 50 °C/W When mounted on 1 inch² FR-4, 2 Oz copper board 2

CAD (KiCad official)

  • Symbol: STD16NF25
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: std16nf25-etched.step / std16nf25-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std16nf25.step / std16nf25.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (15 pp, sha256 6b4a565336ba37ba, retrieved 2026-09-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF