component
STD16NF06T4
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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std16nf06t4: specified limits as data (metadata.characteristics, 36 rows from the datasheet)
2 files changed
+482
README.md+43@@ -21,6 +21,49 @@ STD16NF06T4 from STMicroelectronics, in a TO-252. Pinout and pin descriptions ex | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 60 | V | VGS = 0V | 2 |+| Drain-gate voltage | VDGR | | | 60 | V | RGS = 20 kΩ | 2 |+| Gate-source voltage | VGS | -20 | | 20 | V | | 2 |+| Drain current (continuous) | ID | | | 16 | A | TC = 25°C | 2 |+| Drain current (continuous) | ID | | | 11 | A | TC = 100°C | 2 |+| Drain current (pulsed) | IDM | | | 64 | A | | 2 |+| Total dissipation | PTOT | | | 40 | W | TC = 25°C | 2 |+| Peak diode recovery voltage slope | dv/dt | | | 10.5 | V/ns | | 2 |+| Single pulse avalanche energy | EAS | | | 178 | mJ | | 2 |+| Operating junction and storage temperature range | TJ, Tstg | -55 | | 175 | °C | | 2 |+| Maximum lead temperature for soldering | Tl | | | 275 | °C | | 2 |+| Thermal resistance junction-case | RthJC | | | 3.75 | °C/W | | 2 |+| Thermal resistance junction-ambient | RthJA | | | 100 | °C/W | | 2 |+| Drain-source breakdown voltage | V(BR)DSS | 60 | | | V | ID = 250µA VGS = 0 | 3 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS = Max Rating | 3 |+| Zero gate voltage drain current | IDSS | | | 10 | µA | VDS = Max Rating TC=125°C | 3 |+| Gate body leakage current | IGSS | -100 | | 100 | µA | VDS = 0 VGS = ±20V | 3 |+| Gate threshold voltage | VGS(th) | 2 | | | V | VDS = VGS ID = 250µA | 3 |+| Static drain-source on resistance | RDS(on) | | 0.06 | 0.07 | Ω | VGS = 10V ID = 8A | 3 |+| Forward transconductance | gfs | 6 | | | S | VDS = 25V ID = 8A | 3 |+| Input capacitance | Ciss | | 400 | | pF | VDS = 15V, f = 1MHz, VGS = 0 | 3 |+| Output capacitance | Coss | | 103 | | pF | VDS = 15V, f = 1MHz, VGS = 0 | 3 |+| Reverse transfer capacitance | Crss | | 41.5 | | pF | VDS = 15V, f = 1MHz, VGS = 0 | 3 |+| Total gate charge | Qg | | 14.1 | | nC | VDD = 30 ID = 16A VGS = 10V | 3 |+| Gate-source charge | Qgs | | 2.8 | | nC | VDD = 30 ID = 16A VGS = 10V | 3 |+| Gate-drain charge | Qgd | | 5.4 | | nC | VDD = 30 ID = 16A VGS = 10V | 3 |+| Turn-on delay time | td(on) | | 4 | | ns | VDD = 30V, ID = 8A, RG = 4.7Ω, VGS = 10V | 3 |+| Rise time | tr | | 15 | | ns | VDD = 30V, ID = 8A, RG = 4.7Ω, VGS = 10V | 3 |+| Turn-off delay time | td(off) | | 16 | | ns | VDD = 30V, ID = 8A, RG = 4.7Ω, VGS = 10V | 3 |+| Fall time | tf | | 5.5 | | ns | VDD = 30V, ID = 8A, RG = 4.7Ω, VGS = 10V | 3 |+| Source-drain current | ISD | | | 16 | A | | 4 |+| Source-drain current (pulsed) | ISDM | | | 64 | A | | 4 |+| Forward on voltage | VSD | | | 1.5 | V | ISD = 8A VGS = 0 | 4 |+| Reverse recovery time | trr | | 49 | | ns | ISD = 16A, di/dt = 100A/µs, VDD = 20V, TJ = 150°C | 4 |+| Reverse recovery charge | Qrr | | 78 | | µC | ISD = 16A, di/dt = 100A/µs, VDD = 20V, TJ = 150°C | 4 |+| Reverse recovery current | IRRM | | 3.2 | | A | ISD = 16A, di/dt = 100A/µs, VDD = 20V, TJ = 150°C | 4 |+ ## CAD (KiCad official) - Symbol: `STD16NF06T4`
page.json+439@@ -136,6 +136,445 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "907c53843105aea3",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-gate voltage",+ "symbol": "VDGR",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "RGS = 20 kΩ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "TC = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 11,+ "conditions": "TC = 100°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 64,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total dissipation",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "TC = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 10.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 178,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction and storage temperature range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum lead temperature for soldering",+ "symbol": "Tl",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 275,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 3.75,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "ID = 250µA VGS = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = Max Rating",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = Max Rating TC=125°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 VGS = ±20V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": null,+ "max": null,+ "conditions": "VDS = VGS ID = 250µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.06,+ "max": 0.07,+ "conditions": "VGS = 10V ID = 8A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Forward transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 6,+ "typ": null,+ "max": null,+ "conditions": "VDS = 25V ID = 8A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 400,+ "max": null,+ "conditions": "VDS = 15V, f = 1MHz, VGS = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 103,+ "max": null,+ "conditions": "VDS = 15V, f = 1MHz, VGS = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 41.5,+ "max": null,+ "conditions": "VDS = 15V, f = 1MHz, VGS = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 14.1,+ "max": null,+ "conditions": "VDD = 30 ID = 16A VGS = 10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.8,+ "max": null,+ "conditions": "VDD = 30 ID = 16A VGS = 10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5.4,+ "max": null,+ "conditions": "VDD = 30 ID = 16A VGS = 10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 4,+ "max": null,+ "conditions": "VDD = 30V, ID = 8A, RG = 4.7Ω, VGS = 10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 15,+ "max": null,+ "conditions": "VDD = 30V, ID = 8A, RG = 4.7Ω, VGS = 10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 16,+ "max": null,+ "conditions": "VDD = 30V, ID = 8A, RG = 4.7Ω, VGS = 10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 5.5,+ "max": null,+ "conditions": "VDD = 30V, ID = 8A, RG = 4.7Ω, VGS = 10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 64,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "ISD = 8A VGS = 0",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 49,+ "max": null,+ "conditions": "ISD = 16A, di/dt = 100A/µs, VDD = 20V, TJ = 150°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "µC",+ "min": null,+ "typ": 78,+ "max": null,+ "conditions": "ISD = 16A, di/dt = 100A/µs, VDD = 20V, TJ = 150°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 3.2,+ "max": null,+ "conditions": "ISD = 16A, di/dt = 100A/µs, VDD = 20V, TJ = 150°C",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [],