component
STD16NF06T4
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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README
markdownSTD16NF06T4
STMicroelectronics · MOSFETs · TO-252
STD16NF06T4 from STMicroelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control terminal; Gate-Source voltage rating is ±20V and threshold voltage VGS(th) is 2V typical. |
| 2 | D | passive | Drain terminal, also electrically connected to the tab; rated VDS=60V, continuous ID=16A at TC=25°C. |
| 3 | S | passive | Source terminal of the N-channel power MOSFET. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 60 | V | VGS = 0V | 2 | ||
| Drain-gate voltage | VDGR | 60 | V | RGS = 20 kΩ | 2 | ||
| Gate-source voltage | VGS | -20 | 20 | V | 2 | ||
| Drain current (continuous) | ID | 16 | A | TC = 25°C | 2 | ||
| Drain current (continuous) | ID | 11 | A | TC = 100°C | 2 | ||
| Drain current (pulsed) | IDM | 64 | A | 2 | |||
| Total dissipation | PTOT | 40 | W | TC = 25°C | 2 | ||
| Peak diode recovery voltage slope | dv/dt | 10.5 | V/ns | 2 | |||
| Single pulse avalanche energy | EAS | 178 | mJ | 2 | |||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 2 | ||
| Maximum lead temperature for soldering | Tl | 275 | °C | 2 | |||
| Thermal resistance junction-case | RthJC | 3.75 | °C/W | 2 | |||
| Thermal resistance junction-ambient | RthJA | 100 | °C/W | 2 | |||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | ID = 250µA VGS = 0 | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS = Max Rating | 3 | ||
| Zero gate voltage drain current | IDSS | 10 | µA | VDS = Max Rating TC=125°C | 3 | ||
| Gate body leakage current | IGSS | -100 | 100 | µA | VDS = 0 VGS = ±20V | 3 | |
| Gate threshold voltage | VGS(th) | 2 | V | VDS = VGS ID = 250µA | 3 | ||
| Static drain-source on resistance | RDS(on) | 0.06 | 0.07 | Ω | VGS = 10V ID = 8A | 3 | |
| Forward transconductance | gfs | 6 | S | VDS = 25V ID = 8A | 3 | ||
| Input capacitance | Ciss | 400 | pF | VDS = 15V, f = 1MHz, VGS = 0 | 3 | ||
| Output capacitance | Coss | 103 | pF | VDS = 15V, f = 1MHz, VGS = 0 | 3 | ||
| Reverse transfer capacitance | Crss | 41.5 | pF | VDS = 15V, f = 1MHz, VGS = 0 | 3 | ||
| Total gate charge | Qg | 14.1 | nC | VDD = 30 ID = 16A VGS = 10V | 3 | ||
| Gate-source charge | Qgs | 2.8 | nC | VDD = 30 ID = 16A VGS = 10V | 3 | ||
| Gate-drain charge | Qgd | 5.4 | nC | VDD = 30 ID = 16A VGS = 10V | 3 | ||
| Turn-on delay time | td(on) | 4 | ns | VDD = 30V, ID = 8A, RG = 4.7Ω, VGS = 10V | 3 | ||
| Rise time | tr | 15 | ns | VDD = 30V, ID = 8A, RG = 4.7Ω, VGS = 10V | 3 | ||
| Turn-off delay time | td(off) | 16 | ns | VDD = 30V, ID = 8A, RG = 4.7Ω, VGS = 10V | 3 | ||
| Fall time | tf | 5.5 | ns | VDD = 30V, ID = 8A, RG = 4.7Ω, VGS = 10V | 3 | ||
| Source-drain current | ISD | 16 | A | 4 | |||
| Source-drain current (pulsed) | ISDM | 64 | A | 4 | |||
| Forward on voltage | VSD | 1.5 | V | ISD = 8A VGS = 0 | 4 | ||
| Reverse recovery time | trr | 49 | ns | ISD = 16A, di/dt = 100A/µs, VDD = 20V, TJ = 150°C | 4 | ||
| Reverse recovery charge | Qrr | 78 | µC | ISD = 16A, di/dt = 100A/µs, VDD = 20V, TJ = 150°C | 4 | ||
| Reverse recovery current | IRRM | 3.2 | A | ISD = 16A, di/dt = 100A/µs, VDD = 20V, TJ = 150°C | 4 |
CAD (KiCad official)
- Symbol:
STD16NF06T4 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
std16nf06t4-etched.step/std16nf06t4-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);std16nf06t4.step/std16nf06t4.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (11 pp, sha256
907c53843105aea3, retrieved 2026-09-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-sonnet-5(text+vision), consensusclaude-opus-4-8(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).