component
STD15NF10L
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STD15NF10L
UMW · MOSFETs · TO-252
STD15NF10L from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet limits the gate-source voltage VGS to ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; the datasheet limits the drain-source voltage VDS to 100 V and rates continuous drain current ID at 20 A (TC=25°C, VGS=10 V). |
| 3 | S | passive | Source terminal; it is the reference for the gate-source voltage VGS and the source current path, with the datasheet giving the rated limits in its absolute maximum ratings and electrical characteristics. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 20 | A | VGS=10V, TC=25°C | 1 | ||
| Continuous Drain Current | ID | 10 | A | VGS=10V, TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 36.5 | mJ | VDD=25V, VGS=10V, L=0.1mH, IAS=27A | 1 | ||
| Avalanche Current | IAS | 15 | A | 1 | |||
| Total Power Dissipation | PD | 34.7 | W | TC=25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | °C/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2.4 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID=250µA, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250µA | 2 |
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 65 | 75 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 85 | 90 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Drain-Source Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.098 | V/°C | ID=1mA, Reference to 25°C | 2 | ||
| Gate Threshold Voltage Temperature Coefficient | ΔVGS(th) | -4.75 | mV/°C | VDS=VGS, ID=250μA | 2 | ||
| Forward Transconductance | gFS | 28.7 | S | VDS=5V, ID=20A | 2 | ||
| Input Capacitance | Ciss | 1535 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 60 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 37 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
STD15NF10L - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
std15nf10l-etched.step/std15nf10l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);std15nf10l.step/std15nf10l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (8 pp, sha256
e02310751ae36d28, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STD15NF10L
**UMW** · MOSFETs · TO-252
STD15NF10L from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet limits the gate-source voltage VGS to ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; the datasheet limits the drain-source voltage VDS to 100 V and rates continuous drain current ID at 20 A (TC=25°C, VGS=10 V). |
| 3 | S | passive | Source terminal; it is the reference for the gate-source voltage VGS and the source current path, with the datasheet giving the rated limits in its absolute maximum ratings and electrical characteristics. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 20 | A | VGS=10V, TC=25°C | 1 |
| Continuous Drain Current | ID | | | 10 | A | VGS=10V, TC=100°C | 1 |
| Pulsed Drain Current | IDM | | | 30 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 36.5 | mJ | VDD=25V, VGS=10V, L=0.1mH, IAS=27A | 1 |
| Avalanche Current | IAS | | | 15 | A | | 1 |
| Total Power Dissipation | PD | | | 34.7 | W | TC=25°C | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Junction Temperature Range | TJ | -55 | | 150 | °C | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 62 | °C/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 2.4 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | ID=250µA, VGS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250µA | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 65 | 75 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 85 | 90 | mΩ | VGS=4.5V, ID=15A | 2 |
| Drain-Source Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.098 | | V/°C | ID=1mA, Reference to 25°C | 2 |
| Gate Threshold Voltage Temperature Coefficient | ΔVGS(th) | | -4.75 | | mV/°C | VDS=VGS, ID=250μA | 2 |
| Forward Transconductance | gFS | | 28.7 | | S | VDS=5V, ID=20A | 2 |
| Input Capacitance | Ciss | | 1535 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 60 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 37 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `STD15NF10L`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `std15nf10l-etched.step` / `std15nf10l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `std15nf10l.step` / `std15nf10l.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755887054188765184) (8 pp, sha256 `e02310751ae36d28`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/std15nf10l-datasheet.pdf)