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STD10PF06-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STD10PF06-HXY

HXY MOSFET · MOSFETs · TO-252-2L

STD10PF06-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold -1.0 V to -2.5 V at ID=-250uA, usable with gate drive as low as 4.5 V.
2 D passive Drain, connected to the exposed tab (center lead omitted in the 2-lead package); VDS rated -60 V and continuous ID -10 A at TC=25℃.
3 S passive Source of the P-channel MOSFET; continuous body-diode source current up to -9.5 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 125 140 mΩ VGS=-10V, ID=-8A 2
Static Drain-Source On-Resistance RDS(ON) 168 210 mΩ VGS=-4.5V, ID=-6A 2
Gate Threshold Voltage VGS(th) -1 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=-48V, VGS=0V, TJ=150℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -9.5 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -24 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current at TC=25℃ ID@TC=25℃ -10 A VGS @ -10V 1
Continuous Drain Current at TC=100℃ ID@TC=100℃ -8.3 A VGS @ -10V 1
Pulsed Drain Current IDM -26 A 1
Single Pulse Avalanche Energy EAS 29.8 mJ 1
Avalanche Current IAS -24.4 A 1
Total Power Dissipation at TC=25℃ PD@TC=25℃ 31.3 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 4 ℃/W 1

CAD (KiCad official)

  • Symbol: STD10PF06-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: std10pf06-hxy-etched.step / std10pf06-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std10pf06-hxy.step / std10pf06-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 35fac60788e00d64, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF