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Ray Set visibility: public 5cf1da7 12d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "std10nm60n-vb",
  "title": "STD10NM60N-VB",
  "brief": "VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "std10nm60n-vb",
    "factory-2.0.0",
    "extractor-text"
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  "component": {
    "mpn": "STD10NM60N-VB",
    "manufacturer": "VBsemi Elec",
    "package": "TO-252",
    "pin_count": 3,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/d67dfd35d8d1a5abb7efae34a038cb9a.pdf",
    "parts": {
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      "footprint": "std10nm60n-vb.kicad_mod",
      "model_3d": "std10nm60n-vb-hero.glb",
      "model_3d_plain": "std10nm60n-vb-etched.glb",
      "model_3d_step": "std10nm60n-vb-etched.step",
      "model_3d_step_plain": "std10nm60n-vb.step",
      "lbr": "std10nm60n-vb.lbr"
    },
    "distributor_links": {
      "lcsc": "C20626329"
    },
    "distributor_check": {
      "checked_at": "2026-10-27T09:32:48Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
      },
      "mouser": {
        "pn": null,
        "status": "quota"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate of the N-channel MOSFET, rated for a maximum gate-source voltage of ±30 V with the threshold VGS(th) of 2 to 4 V at 250 µA."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET (also the case tab), rated for a drain-source voltage of 650 V."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, the return for the gate drive and the body diode."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The top-view drawing labels the pins only as G, D, S in left-to-right order. It prints no pin number; Page 7 gives the TO-252AA case outline dimensions only. It has no pin-number table, and the drain ta"
        ],
        "pages_sent": 8,
        "cost_usd": 0.0728,
        "at": "2026-10-27T09:32:15"
      },
      "datasheet": {
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        "pages": 8,
        "sha256": "5c93581502a272d1",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
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      "footprint": "viewers/footprint.html"
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        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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          6.5,
          2.32
        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
        "checked": "2026-10-27",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
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        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
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        "sha256": "b609a37595426f5036c79292e4091a672f339a034f4c94a3023757e00af25527",
        "checked": "2026-10-27",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "VBsemi Elec",
      "Package": "TO-252",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "5c93581502a272d141ac7599e8d1376f13795c88c1882c42f4458c79519e25a6",
      "rows": [
        {
          "name": "Gate-Source Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 2,
          "typ": null,
          "max": 4,
          "conditions": "VDS = VGS, ID = 250 μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Leakage",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS = ± 20 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Leakage",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "μA",
          "min": -1,
          "typ": null,
          "max": 1,
          "conditions": "VGS = ± 30 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS = 600 V, VGS = 0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 10,
          "conditions": "VDS = 520 V, VGS = 0 V, TJ = 125 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.5,
          "conditions": "TJ = 25 °C, IS = 4 A, VGS = 0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 650,
          "conditions": "TC = 25 °C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": 30,
          "conditions": "TC = 25 °C",
          "source_page": 1,
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        },
        {
          "name": "Operating Junction and Storage Temperature Range",
          "symbol": "TJ, Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Soldering Recommendations (Peak Temperature)",
          "symbol": "",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": null,
          "typ": null,
          "max": 300,
          "conditions": "for 10 s, 1.6 mm from case",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Maximum Junction-to-Ambient",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 63,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Maximum Junction-to-Case (Drain)",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 0.6,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "VDS Temperature Coefficient",
          "symbol": "ΔVDS/TJ",
          "kind": "temperature_coefficient",
          "unit": "V/°C",
          "min": null,
          "typ": -0.65,
          "max": null,
          "conditions": "Reference to 25 °C, ID = 1 mA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Input Resistance",
          "symbol": "Rg",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 3.5,
          "max": null,
          "conditions": "f = 1 MHz, open drain",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Reverse Recovery Time",
          "symbol": "trr",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 190,
          "max": null,
          "conditions": "TJ = 25 °C, IF = IS = 4 A, dI/dt = 100 A/μs, VR = 400 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Reverse Recovery Charge",
          "symbol": "Qrr",
          "kind": "electrical",
          "unit": "μC",
          "min": null,
          "typ": 2.3,
          "max": null,
          "conditions": "TJ = 25 °C, IF = IS = 4 A, dI/dt = 100 A/μs, VR = 400 V",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [],
  "sections": [
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    "viewers",
    "readme",
    "breadcrumbs",
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  "discovery_triggers": [
    "std10nm60n-vb"
  ],
  "discovery_pitch": "STD10NM60N-VB (VBsemi Elec) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
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    "path": "docs/hero.png"
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    "std10nm60n-vb.lbr",
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    "std10nm60n-vb-etched.glb"
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  "visibility": {
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  }
}