component
STCMB1TR
Public Made by Adomby adom
STMicroelectronics AC-DC Controllers & Regulators, SOIC-20-300mil. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTCMB1TR
STMicroelectronics · AC-DC Controllers & Regulators · SOIC-20-300mil
STCMB1TR from STMicroelectronics, in a SOIC-20-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | HV | input | 800 V-rated high-voltage start-up generator and ac sensing input, connected to the ac side of the bridge via two diodes and a mandatory 3 k to 9 k series resistor; it also supplies X-capacitor discharge. |
| 2 | N.C. | unconnected | Not internally connected; high-voltage spacer for creepage distance. |
| 3 | FB | input | PFC output voltage feedback with 2.5 V reference, 7% overvoltage stop, latch-off below 0.5 V, HB enabled above 2.4 V and inhibited below 1.75 V (dc brown-out). |
| 4 | COMP | output | PFC error amplifier output; the PFC gate driver is inhibited (burst mode) when the voltage falls below 1 V (typ.). |
| 5 | TON | passive | Sets PFC MOSFET maximum on-time via a parallel resistor and capacitor to ground, generating a ramp compared with COMP. |
| 6 | ZCD | input | Boost inductor demagnetization sensing input; a negative-going edge triggers PFC MOSFET turn-on (absolute maximum 3 mA). |
| 7 | CF | passive | Timing capacitor for the HB oscillator, connected to GND and charged by the current set at RFMIN. |
| 8 | CSS | passive | HB soft-start capacitor to GND with resistor to RFMIN; burst mode and second-level OCP are inhibited while below 0.3 V. |
| 9 | RFMIN | output | Accurate 2 V reference; resistor to GND sets the maximum timeshift and optocoupler phototransistor sets the minimum (max source current 2 mA). |
| 10 | STBY | input | HB burst mode threshold input with 1.25 V reference and 40 mV restart hysteresis; requires RC filter with R > 100 ohm and C > 100 pF; tie to RFMIN if unused. |
| 11 | ISEN_PFC | input | PFC inductor current sense input with -25 mV PWM start threshold and -0.5 V overcurrent threshold; requires RC filter with R > 100 ohm and C > 100 pF. |
| 12 | ISEN_HB | input | HB resonant current sense input with 0.8 V soft-start discharge threshold and 1.5 V immediate shutdown threshold; RC filter R > 50 ohm, C > 100 pF recommended; do not short to ground. |
| 13 | GND | power_in | Ground return for signal circuits, the PFC gate driver and the HB low-side gate driver. |
| 14 | GD_PFC | output | PFC gate driver totem pole output with 0.6 A source and 0.8 A sink minimum, actively pulled to GND during UVLO. |
| 15 | VCC | power_in | Signal part supply, operating range 10 to 20 V, requiring at least 22 uF electrolytic capacitor to GND (absolute maximum 21 V). |
| 16 | LVG | output | HB low-side gate drive output with 0.3 A source and 0.8 A sink minimum, actively pulled to GND during UVLO. |
| 17 | N.C. | unconnected | Not internally connected; high-voltage spacer for creepage distance. |
| 18 | OUT | passive | High-side gate drive floating ground and current return for the high-side gate drive current. |
| 19 | HVG | output | HB high-side gate drive output with 0.3 A source and 0.8 A sink minimum, with internal resistor to OUT during UVLO. |
| 20 | BOOT | power_in | High-side gate drive floating supply, bootstrap capacitor to OUT fed by internal synchronous bootstrap diode (absolute maximum 620 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SOIC-20-300mil |
| Category | Power Supply Chip |
| Pins | 20 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating range VCC | VVCC | 10 | 20 | V | After turn-on | 11 | |
| Turn-on threshold | VVCCOn | 15.5 | 16.5 | 17.5 | V | Voltage rising | 11 |
| Turn-off threshold | VVCCOff | 9 | 9.5 | 10 | V | Voltage falling | 11 |
| Quiescent current after turn-on | Iq | 1.5 | 2.2 | mA | VFB = 1 V | 11 | |
| Quiescent current after turn-on | Iq | 3 | 4 | mA | VFB = 2.5 V | 11 | |
| Idle quiescent current during burst mode | Iq | 0.7 | 0.94 | mA | Tj = 25 °C | 11 | |
| Quiescent current IC latched off | Iq | 1.2 | mA | IC latched off | 11 | ||
| Operating supply current | ICC | 2.8 | 3.6 | mA | fsw = 75 kHz, VFB = 1 V, GD_PFC only | 11 | |
| Operating supply current | ICC | 4.5 | 6 | mA | fsw = 75 kHz, VFB = 2.5 V, all drivers | 11 | |
| HV breakdown voltage | VHV | 800 | V | IHV < 100 µA | 11 | ||
| HV start voltage (rising) | VHVstart | 10 | 18 | 25 | V | IVCC < 100 µA | 11 |
| VCC switchover threshold | VVCC_SO | 1 | 1.5 | 2 | V | 11 | |
| HV ON-state charge current | IHV, ON | 0.5 | 1 | 1.6 | mA | VHV > VHVstart, VVCC < VVCC_SO | 11 |
| HV ON-state charge current | IHV, ON | 5 | 8 | 11 | mA | VHV > VHVstart, VVCC > VVCC_SO | 11 |
| HV ON-state charge current | IHV, ON | 3.5 | 4.5 | 5.5 | mA | IC latched off or restart after overload timeout | 11 |
| HV off-state leakage current | IHV, OFF | 20 | 24 | µA | VHV = 400 V | 11 | |
| Generator shutdown timeout | TTOUT | 64 | 80 | 96 | ms | After VVCC exceeds VVCCOn | 11 |
| X-cap peak residual voltage | VHVmin | 45 | V | IHV, DIS > 4.2 mA | 11 | ||
| X-cap discharge current | IHV, DIS | 4.2 | mA | VHV > 45 V | 11 | ||
| Brown-out threshold | VHVpk_BO | 92 | 98 | 104 | V | Peak voltage falling; LLC in continuous switching, no burst mode, RHV series = 5.6 K | 12 |
| Brown-in threshold | VHVpk_BI | 106 | 113 | 120 | V | Peak voltage rising; LLC in continuous switching, no burst mode, RHV series = 5.6 K | 12 |
| Brown-out debounce time | TDB | 32 | 40 | 48 | ms | 12 | |
| ZCD upper clamp voltage | VZCDH | 2.8 | 3.3 | V | IZCD = 2.5 mA | 12 | |
| ZCD lower clamp voltage | VZCDL | -0.3 | 0 | V | IZCD = -2.5 mA | 12 | |
| ZCD input bias current | IZCDb | 5 | µA | VZCD = 1 to 2.2 V | 12 | ||
| TON charge current | ITON | 180 | 200 | 220 | µA | VTON = 3 V, VHV_pk = 160 V dc | 12 |
| TON charge current | ITON | 640 | 800 | 960 | µA | VTON = 3 V, VHV_pk = 320 V dc | 12 |
| TON linear operating range | VTON | 0 | 3 | V | 12 | ||
| TON discharge resistance | RDSC | 60 | 200 | Ω | 12 | ||
| Internal voltage reference | Vref | 2.475 | 2.5 | 2.525 | V | Tj = 25 °C | 12 |
| Internal voltage reference | Vref | 2.44 | 2.58 | V | 10 V < VVCC < 21 V | 12 | |
| Error amp input bias current | IFB | -1 | -0.2 | 1 | µA | VFB = 0 to 3 V | 12 |
| COMP upper clamp voltage | VCOMPSAT | 4 | 4.3 | V | ISOURCE = 20 µA | 12 | |
| Max. sink/source current | ICOMP | 150 | 200 | µA | VCOMP = 3 V, VFB = 2.3 V | 12 | |
| Transconductance | gm | 160 | 200 | 240 | µS | VFB = Vref | 12 |
| D_OVP threshold | VFB_S | 2.595 | 2.675 | 2.755 | V | Tj = 25 °C | 12 |
| D_OVP threshold | VFB_S | 2.568 | 2.782 | V | 10 V < VVCC < 21 V | 12 | |
| Restart voltage after D_OVP | VFB_R | 2.47 | 2.55 | 2.63 | V | 12 | |
| D_OVP debounce time | TDB | 40 | 50 | 65 | µs | 12 | |
| S_OVP threshold | VCOMP_S | 0.9 | 1 | 1.1 | V | Voltage falling | 12 |
| Restart voltage after S_OVP | VCOMP_R | 0.92 | 1.02 | 1.15 | V | Voltage rising | 12 |
| FFP disable threshold | VFB_D | 0.42 | 0.46 | 0.5 | V | Voltage falling | 13 |
| FFP debounce time | TDB | 40 | 50 | 65 | µs | 13 | |
| ISEN_PFC input bias current | IISEN_PFC | 4.8 | µA | VISEN_PFC = -0.5 V | 13 | ||
| PFC OCP threshold | VISEN_PFC | -0.54 | -0.5 | -0.46 | V | VCOMP = upper clamp | 13 |
| PFC OCP delay to output | td(H-L) | 220 | 280 | ns | 13 | ||
| PFC start-up delay | tSTART_DEL | 8 | 10 | 13 | µs | After VISEN_PFC > VISEN_PFC_Z | 13 |
| PFC gate driver output low voltage | VOL | 0.4 | 0.7 | V | Isink = 100 mA | 13 | |
| PFC gate driver output high voltage | VOH | 14.7 | 14.9 | V | Isource = 5 mA | 13 | |
| PFC gate driver fall time | tf | 30 | 70 | ns | From 15 to 1.5 V | 13 | |
| PFC gate driver rise time | tr | 60 | 110 | ns | From 0 to 10 V | 13 | |
| HB dc brown-out enable voltage | VFB_E | 2.34 | 2.4 | 2.49 | V | Voltage rising | 13 |
| HB dc brown-out disable voltage | VFB_D | 1.7 | 1.75 | 1.8 | V | Voltage falling | 13 |
| Oscillator ramp peak | VCFp | 1.44 | 1.5 | 1.56 | V | VSTBY > 1.34 V | 13 |
| Oscillator ramp peak | VCFp | 1.775 | 1.85 | 1.925 | V | VSTBY < 1.26 V | 13 |
| RFMIN voltage reference | VRFMIN | 1.93 | 2 | 2.08 | V | 13 | |
| Output duty cycle (HVG and LVG) | D | 49 | 50 | 51 | % | VSTBY = 2 V, RRFMIN = 5.15 k | 13 |
| Time-shift | TSH | 8.5 | 9 | 9.5 | µs | RRFMIN = 22.5 k | 13 |
| Absolute maximum VCC supply voltage | VVCC | -0.3 | 21 | V | Pin 15 | 10 | |
| Absolute maximum HV pin voltage | VHV | -1 | 800 | V | Pin 1, referred to GND | 10 | |
| Absolute maximum BOOT voltage | VBOOT | -1 | 620 | V | Pin 20, referred to GND | 10 | |
| Thermal resistance junction to ambient | Rth j-amb | 90 | °C/W | 10 | |||
| Power dissipation | Ptot | 0.6 | W | Tamb = 70 °C | 10 | ||
| Junction temperature operating range | Tj | -40 | 150 | °C | 10 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 10 |
CAD (KiCad official)
- Symbol:
STCMB1TR - Footprint:
Package_SO:SOIC-20W_7.5x12.8mm_P1.27mm - 3D model: SOIC-20-300mil (KiCad packages3D, STEP)
- 3D model files:
stcmb1tr-etched.step/stcmb1tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stcmb1tr.step/stcmb1tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (59 pp, sha256
6782dcbd1e92b66a, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).