# STC4606-VB

**VBsemi Elec** · MOSFETs · SO-8

STC4606-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (30 V, 8 A package-limited, RDS(on) 0.018 Ω at VGS = 10 V). |
| 2 | G1 | input | Gate of the N-channel MOSFET, with VGS rated ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-30 V, -8 A package-limited, RDS(on) 0.040 Ω at VGS = -10 V). |
| 4 | G2 | input | Gate of the P-channel MOSFET, with VGS rated ±20 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, tied internally to pin 6, with VDS rated -30 V and pulsed ID of -40 A. |
| 6 | D2 | passive | Drain of the P-channel MOSFET, tied internally to pin 5, with VDS rated -30 V and pulsed ID of -40 A. |
| 7 | D1 | passive | Drain of the N-channel MOSFET, tied internally to pin 8, with VDS rated 30 V and pulsed ID of 40 A. |
| 8 | D1 | passive | Drain of the N-channel MOSFET, tied internally to pin 7, with VDS rated 30 V and pulsed ID of 40 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage N-ch | VDS |  |  | 30 | V | TA = 25 °C | 1 |
| Drain-Source Voltage P-ch | VDS |  |  | -30 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | N- and P-channel, TA = 25 °C | 1 |
| Continuous Drain Current N-ch | ID |  |  | 8 | A | TC = 25 °C, TJ = 150 °C, package limited | 1 |
| Continuous Drain Current P-ch | ID |  |  | -8 | A | TC = 25 °C, TJ = 150 °C, package limited | 1 |
| Pulsed Drain Current | IDM |  |  | 40 | A | 10 µs pulse width, N-ch; P-ch -40 | 1 |
| Source-Drain Diode Current | IS |  |  | 2.6 | A | TC = 25 °C, N-ch; P-ch -2.6 | 1 |
| Single Pulse Avalanche Current N-ch | IAS |  |  | 10 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Current P-ch | IAS |  |  | 20 | A | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD |  |  | 2 | W | TA = 25 °C, surface mounted on 1" x 1" FR4, t = 10 s | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient N-ch | RthJA |  | 50 | 62.5 | °C/W | t ≤ 10 s, surface mounted | 1 |
| Junction-to-Ambient P-ch | RthJA |  | 47 | 62.5 | °C/W | t ≤ 10 s, surface mounted | 1 |
| Junction-to-Foot N-ch | RthJF |  | 30 | 40 | °C/W | Steady state | 1 |
| Junction-to-Foot P-ch | RthJF |  | 29 | 38 | °C/W | Steady state | 1 |
| Gate-Body Leakage N-ch | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 |
| Gate-Body Leakage P-ch | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 |
| Zero Gate Voltage Drain Current N-ch | IDSS |  |  | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current P-ch | IDSS |  |  | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current N-ch hot | IDSS |  |  | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 |
| Zero Gate Voltage Drain Current P-ch hot | IDSS |  |  | -10 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current N-ch | ID(on) | 20 |  |  | A | VDS = 5 V, VGS = 10 V | 2 |
| On-State Drain Current P-ch | ID(on) | -20 |  |  | A | VDS = - 5 V, VGS = - 10 V | 2 |
| Drain-Source Breakdown Voltage P-ch | VDS | -30 |  |  | V | VGS = 0 V, ID = - 250 µA | 2 |
| Gate Resistance N-ch | Rg | 0.3 | 1 | 2.3 | Ω | f = 1 MHz | 2 |
| Gate Resistance P-ch | Rg | 1.2 | 5.7 | 9.6 | Ω | f = 1 MHz | 2 |
| Total Gate Charge P-ch | Qg |  | 41.5 | 63 | nC | VDS = - 20 V, VGS = - 10 V, ID = - 10 A | 2 |
| Body Diode Voltage N-ch | VSD |  | 0.81 | 1.2 | V | IS = 5.4 A | 3 |
| Body Diode Voltage P-ch | VSD |  | -0.77 | -1.2 | V | IS = - 2 A | 3 |
| Forward Transconductance N-ch | gfs |  | 27 |  | S | VDS = 15 V, ID = 6.8 A | 2 |
| Forward Transconductance P-ch | gfs |  | 25 |  | S | VDS = - 15 V, ID = - 6.7 A | 2 |

## CAD (KiCad official)

- Symbol: `STC4606-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `stc4606-vb-etched.step` / `stc4606-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stc4606-vb.step` / `stc4606-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/stc4606-vb-datasheet.pdf) (14 pp, sha256 `194b164eeaec3f29`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stc4606-vb-datasheet.pdf)