component

STC4606-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorstc4606-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 12d ago
viewers stc4606-hxy: viewers · Ray 12d ago
package.json Publish 0.1.0 · Ray 12d ago
page.json Set visibility: public · Ray 12d ago
README.md Publish 0.1.0 · Ray 12d ago
stc4606-hxy-etched.glb Publish 0.1.0 · Ray 12d ago
stc4606-hxy-etched.step stc4606-hxy: factory component page (tier=lcsc) · Ray 12d ago
stc4606-hxy-hero.glb stc4606-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 12d ago
stc4606-hxy-hero.overlay.json Publish 0.1.0 · Ray 12d ago
stc4606-hxy.glb Publish 0.1.0 · Ray 12d ago
stc4606-hxy.kicad_mod Publish 0.1.0 · Ray 12d ago
stc4606-hxy.kicad_sym Publish 0.1.0 · Ray 12d ago
stc4606-hxy.lbr Publish 0.1.0 · Ray 12d ago
stc4606-hxy.step Publish 0.1.0 · Ray 12d ago

STC4606-HXY

HXY MOSFET · MOSFETs · SOP-8

STC4606-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the N-channel MOSFET, with VGS limited to ±20V and the N-channel VDS rated at 30V.
2 G1 input Gate of the N-channel MOSFET, with VGS limited to ±20V and VGS(th) specified at 1.0V to 2.5V.
3 S2 passive Source terminal of the P-channel MOSFET, with VDS rated at -30V and VGS limited to ±20V.
4 G2 input Gate of the P-channel MOSFET, with VGS limited to ±20V and VGS(th) specified at -1.0V to -2.5V.
5 D2 passive Drain terminal of the P-channel MOSFET, with continuous drain current ID rated at -8.5A at TA=25℃.
6 D2 passive Drain terminal of the P-channel MOSFET, with continuous drain current ID rated at -8.5A at TA=25℃.
7 D1 passive Drain terminal of the N-channel MOSFET, with continuous drain current ID rated at 7A at TA=25℃.
8 D1 passive Drain terminal of the N-channel MOSFET, with continuous drain current ID rated at 7A at TA=25℃.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 30 V 1
Drain-Source Voltage (P-Ch) VDS -30 V 1
Gate-Source Voltage (N-Ch) VGS -20 20 V 1
Gate-Source Voltage (P-Ch) VGS -20 20 V 1
Continuous Drain Current (N-Ch) ID@TA=25℃ 7 A TA=25℃, VGS @ 10V 1
Continuous Drain Current (P-Ch) ID@TA=25℃ -8.5 A TA=25℃, VGS @ 10V 1
Continuous Drain Current (N-Ch) ID@TA=100℃ 6 A TA=100℃, VGS @ 10V 1
Continuous Drain Current (P-Ch) ID@TA=100℃ -4.6 A TA=100℃, VGS @ 10V 1
Pulsed Drain Current (N-Ch) IDM 20 A 1
Pulsed Drain Current (P-Ch) IDM -28 A 1
Single Pulse Avalanche Energy (N-Ch) EAS 72 mJ 1
Single Pulse Avalanche Energy (P-Ch) EAS 62 mJ 1
Avalanche Current (N-Ch) IAS 21 A 1
Avalanche Current (P-Ch) IAS -19 A 1
Total Power Dissipation (N-Ch) PD@TA=25℃ 2.5 W TA=25℃ 1
Total Power Dissipation (P-Ch) PD@TA=25℃ 3.08 W TA=25℃ 1
Storage Temperature Range (N-Ch) TSTG -55 150 ℃ 1
Storage Temperature Range (P-Ch) TSTG -55 150 ℃ 1
Operating Junction Temperature Range (N-Ch) TJ -55 150 ℃ 1
Operating Junction Temperature Range (P-Ch) TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 45 ℃/W 1
Thermal Resistance Junction-Case RθJC 30 ℃/W 1
Drain-Source Breakdown Voltage (N-Ch) BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance (N-Ch) RDS(ON) 18 25 mΩ VGS=10V, ID=6A 2
Static Drain-Source On-Resistance (N-Ch) RDS(ON) 25 31 mΩ VGS=4.5V, ID=5A 2
Gate Threshold Voltage (N-Ch) VGS(th) 1 1.5 2.5 V 2
Drain-Source Leakage Current (N-Ch) IDSS 1 uA VDS=30V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current (N-Ch) IDSS 5 uA VDS=30V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current (N-Ch) IGSS -100 100 nA VGS=±20V, VDS=0V 2
Single Pulse Avalanche Energy (N-Ch) EAS 16 mJ VDD=25V, L=0.1mH, IAS=10A 2
Continuous Source Current (N-Ch) IS 7 A 2
Pulsed Source Current (N-Ch) ISM 20 A VG=VD=0V, Force Current 2
Diode Forward Voltage (N-Ch) VSD 1.2 V VGS=0V, IS=5A, TJ=25℃ 2
Drain-Source Breakdown Voltage (P-Ch) V(BR)DSS -30 V VGS=0V, ID= -250μA 3
Zero Gate Voltage Drain Current (P-Ch) IDSS -1 μA VDS= -30V, VGS=0V 3
Gate to Body Leakage Current (P-Ch) IGSS -100 100 nA VDS=0V, VGS= ±20V 3
Gate Threshold Voltage (P-Ch) VGS(th) -1 -1.5 -2.5 V VDS=VGS, ID= -250μA 3
Static Drain-Source on-Resistance (P-Ch) RDS(on) 26 35 mΩ VGS= -10V, ID= -7A 3
Static Drain-Source on-Resistance (P-Ch) RDS(on) 38 54 mΩ VGS= -4.5V, ID= -4A 3
Maximum Continuous Drain to Source Diode Forward Current (P-Ch) IS -8.5 A 3
Maximum Pulsed Drain to Source Diode Forward Current (P-Ch) ISM -28 A 3
Drain to Source Diode Forward Voltage (P-Ch) VSD -0.8 -1.2 V VGS=0V, IS= -7A 3

CAD (KiCad official)

  • Symbol: STC4606-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: stc4606-hxy-etched.step / stc4606-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stc4606-hxy.step / stc4606-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (9 pp, sha256 e9972755ee0dc926, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF