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STC4301D
Public Made by Adomby adom
STANSON Tech MOSFETs, TO-252-4. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTC4301D
STANSON Tech · MOSFETs · TO-252-4
STC4301D from STANSON Tech, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (40V, 23.0A continuous at TA=25C). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGSS ±20V, threshold 1.0V to 2.5V). |
| 3 | S2 | passive | Source of the P-channel MOSFET (-40V, -20.0A continuous at TA=25C). |
| 4 | G2 | input | Gate of the P-channel MOSFET (VGSS ±20V, threshold -1.0V to -2.5V). |
| TAB | D1/D2 | passive | Exposed tab, common drain of the N-channel (D1) and P-channel (D2) MOSFETs, tied together internally. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STANSON Tech |
| Package | TO-252-4 |
| Category | Transistors/Thyristors |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDSS | 40 | V | Ta=25℃ unless otherwise noted | 2 | ||
| Drain-Source Voltage (P-channel) | VDSS | -40 | V | Ta=25℃ unless otherwise noted | 2 | ||
| Gate-Source Voltage (N-channel) | VGSS | -20 | 20 | V | Ta=25℃ unless otherwise noted; printed ±20 | 2 | |
| Gate-Source Voltage (P-channel) | VGSS | -20 | 20 | V | Ta=25℃ unless otherwise noted; printed ±20 | 2 | |
| Continuous Drain Current (N-channel) | ID | 23 | A | TA=25℃ | 2 | ||
| Continuous Drain Current (P-channel) | ID | -20 | A | TA=25℃ | 2 | ||
| Continuous Drain Current (N-channel) | ID | 18 | A | TA=70℃ | 2 | ||
| Continuous Drain Current (P-channel) | ID | -16 | A | TA=70℃ | 2 | ||
| Pulsed Drain Current (N-channel) | IDM | 40 | A | 2 | |||
| Pulsed Drain Current (P-channel) | IDM | -46 | A | 2 | |||
| Continuous Source Current, Diode Conduction (N-channel) | IS | 18 | A | Diode conduction | 2 | ||
| Continuous Source Current, Diode Conduction (P-channel) | IS | -27.5 | A | Diode conduction | 2 | ||
| Power Dissipation (N-channel) | PD | 25 | W | TA=25℃ | 2 | ||
| Power Dissipation (P-channel) | PD | 31.5 | W | TA=25℃ | 2 | ||
| Operation Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction to Ambient (N-channel) | RθJA | 62.5 | ℃/W | 2 | |||
| Thermal Resistance Junction to Ambient (P-channel) | RθJA | 62.5 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage (N-channel) | V(BR)DSS | 40 | V | VGS=0V, ID=10mA | 3 | ||
| Drain-Source Breakdown Voltage (P-channel) | V(BR)DSS | -40 | V | VGS=0V, ID=-10mA | 3 | ||
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | 2.5 | V | VDS=VGS, ID=250uA | 3 | |
| Gate Threshold Voltage (P-channel) | VGS(th) | -1 | -2.5 | V | VDS=VGS, ID=-250uA | 3 | |
| Gate Leakage Current (N-channel) | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Leakage Current (P-channel) | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 1 | uA | TJ=25℃, VDS=32V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | uA | TJ=25℃, VDS=-32V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 5 | uA | TJ=55℃, VDS=32V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -5 | uA | TJ=55℃, VDS=-32V, VGS=0V | 3 | ||
| Drain-Source On-Resistance (N-channel) | RDS(on) | 0.025 | Ω | VGS=10V, ID=10.0A | 3 | ||
| Drain-Source On-Resistance (P-channel) | RDS(on) | 0.035 | Ω | VGS=-10V, ID=-10.0A | 3 | ||
| Drain-Source On-Resistance (N-channel) | RDS(on) | 0.032 | Ω | VGS=10V, ID=10.0A | 3 | ||
| Drain-Source On-Resistance (P-channel) | RDS(on) | 0.043 | Ω | VGS=-10V, ID=-10.0A | 3 | ||
| Drain-Source On-Resistance (N-channel) | RDS(on) | 0.03 | Ω | VGS=4.5V, ID=6.0A | 3 | ||
| Drain-Source On-Resistance (P-channel) | RDS(on) | 0.04 | Ω | VGS=-4.5V, ID=-5.0 A | 3 | ||
| Drain-Source On-Resistance (N-channel) | RDS(on) | 0.037 | Ω | VGS=4.5V, ID=6.0A | 3 | ||
| Drain-Source On-Resistance (P-channel) | RDS(on) | 0.065 | Ω | VGS=-4.5V, ID=-5.0 A | 3 | ||
| Diode Forward Voltage (N-channel) | VSD | 1.2 | V | IS=1.0A, VGS=0V | 3 | ||
| Diode Forward Voltage (P-channel) | VSD | -1.2 | V | IS=-1.0A, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
STC4301D - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files:
stc4301d-etched.step/stc4301d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stc4301d.step/stc4301d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STANSON Tech datasheet (8 pp, sha256
1a5e42ee58040294, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).