component
STB130N6F7
Public Made by Adomby adom
STMicroelectronics MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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stb130n6f7: specified limits as data (metadata.characteristics, 14 rows from the datasheet)
2 files changed
+197−1
README.md+21@@ -21,6 +21,27 @@ STB130N6F7 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extr | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 60 | V | | 3 |+| Gate-source voltage | VGS | -20 | | 20 | V | | 3 |+| Drain current (continuous) | ID | | | 80 | A | Tcase = 25 °C; current limited by package | 3 |+| Drain current (pulsed) | IDM | | | 320 | A | Pulse width limited by safe operating area | 3 |+| Total dissipation | PTOT | | | 160 | W | Tcase = 25 °C | 3 |+| Single pulse avalanche energy | EAS | | | 200 | mJ | Starting Tj = 25 °C, ID = 20 A, VDD = 40 V | 3 |+| Storage temperature | Tstg | -55 | | 175 | °C | | 3 |+| Thermal resistance junction-ambient | Rthj-amb | | | 35 | °C/W | Mounted on 1-inch² FR-4, 2 Oz copper board | 3 |+| Drain-source breakdown voltage | V(BR)DSS | 60 | | | V | VGS = 0 V, ID = 1 mA | 4 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 60 V | 4 |+| Gate-body leakage current | IGSS | | | 100 | nA | VDS = 0 V, VGS = 20 V | 4 |+| Gate threshold voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 µA | 4 |+| Static drain-source on-resistance | RDS(on) | | 4.2 | 5 | mΩ | VGS = 10 V, ID = 40 A | 4 |+| Thermal resistance junction-case | Rthj-case | | 0.94 | | °C/W | | 3 |+ ## CAD (KiCad official) - Symbol: `STB130N6F7`
page.json+176−1@@ -151,6 +151,181 @@ "Package": "D2PAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "fac52b97cd192b65",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "Tcase = 25 °C; current limited by package",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 320,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total dissipation",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "Tcase = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "Starting Tj = 25 °C, ID = 20 A, VDD = 40 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-ambient",+ "symbol": "Rthj-amb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "Mounted on 1-inch² FR-4, 2 Oz copper board",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 1 mA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 60 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = 20 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": null,+ "max": 4,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 4.2,+ "max": 5,+ "conditions": "VGS = 10 V, ID = 40 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 0.94,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +367,4 @@ "visibility": { "public": true }-}+}