component
STB130N6F7
Public Made by Adomby adom
STMicroelectronics MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTB130N6F7
STMicroelectronics · MOSFETs · D2PAK
STB130N6F7 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V (Table 2). |
| 2 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 60 V and continuous drain current at 80 A at Tcase = 25 °C, limited by the package. |
| 3 | S | passive | Source terminal of the MOSFET; the source-drain diode forward voltage is 1.2 V typical at VGS = 0 V and ISD = 80 A (Table 7). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | D2PAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 60 | V | 3 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 3 | ||
| Drain current (continuous) | ID | 80 | A | Tcase = 25 °C; current limited by package | 3 | ||
| Drain current (pulsed) | IDM | 320 | A | Pulse width limited by safe operating area | 3 | ||
| Total dissipation | PTOT | 160 | W | Tcase = 25 °C | 3 | ||
| Single pulse avalanche energy | EAS | 200 | mJ | Starting Tj = 25 °C, ID = 20 A, VDD = 40 V | 3 | ||
| Storage temperature | Tstg | -55 | 175 | °C | 3 | ||
| Thermal resistance junction-ambient | Rthj-amb | 35 | °C/W | Mounted on 1-inch² FR-4, 2 Oz copper board | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0 V, ID = 1 mA | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 60 V | 4 | ||
| Gate-body leakage current | IGSS | 100 | nA | VDS = 0 V, VGS = 20 V | 4 | ||
| Gate threshold voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 µA | 4 | |
| Static drain-source on-resistance | RDS(on) | 4.2 | 5 | mΩ | VGS = 10 V, ID = 40 A | 4 | |
| Thermal resistance junction-case | Rthj-case | 0.94 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
STB130N6F7 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: D2PAK (KiCad packages3D, STEP)
- 3D model files:
stb130n6f7-etched.step/stb130n6f7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stb130n6f7.step/stb130n6f7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (14 pp, sha256
fac52b97cd192b65, retrieved 2026-10-12, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).