component
STB10NK60ZT4
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-263-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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STB10NK60ZT4
STMicroelectronics · MOSFETs · TO-263-2
STB10NK60ZT4 from STMicroelectronics, in a TO-263-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the Zener-protected N-channel MOSFET, with gate-source voltage rated at ±30 V. |
| 2 | D | passive | Drain of the MOSFET, rated 600 V drain-source voltage and 10 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source of the MOSFET, with source-drain diode forward voltage VSD of 1.6 V max at ISD = 10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-263-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | ID = 250 μA, VGS = 0 V | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 600 V | 3 | ||
| Zero gate voltage drain current | IDSS | 50 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C | 3 | ||
| Gate body leakage current | IGSS | -10 | 10 | µA | VGS = ±20 V, VDS = 0 V | 3 | |
| Gate threshold voltage | VGS(th) | 3 | 3.75 | 4.5 | V | VDS = VGS, ID = 250 µA | 3 |
| Static drain-source on-resistance | RDS(on) | 0.68 | 0.75 | Ω | VGS = 10 V, ID = 4.5 A | 3 | |
| Total gate charge | Qg | 48 | 70 | nC | VDD = 480 V, ID = 8 A, VGS = 0 to 10 V | 3 | |
| Forward on voltage | VSD | 1.6 | V | ISD = 10 A, VGS = 0 V | 4 | ||
| Source-drain current | ISD | 10 | A | 4 | |||
| Source-drain current (pulsed) | ISDM | 36 | A | 4 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 2 | ||
| Drain-source voltage | VDS | 600 | V | 2 | |||
| Drain current (continuous) | ID | 10 | A | TC = 25 °C | 2 | ||
| Drain current (continuous) | ID | 5.7 | A | TC = 100 °C | 2 | ||
| Drain current (pulsed) | IDM | 36 | A | 2 | |||
| Total power dissipation | PTOT | 115 | W | TC = 25 °C | 2 | ||
| Gate-source human body model ESD | ESD | 4 | kV | C = 100 pF, R = 1.5 kΩ | 2 | ||
| Peak diode recovery voltage slope | dv/dt | 4.5 | V/ns | ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD = 480 V | 2 | ||
| Insulation withstand voltage (RMS) | VISO | 2.5 | kV | from all three leads to external heat sink, t = 1 s, TC = 25 °C | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction-to-case | RthJC | 1.09 | °C/W | D2PAK | 2 | ||
| Thermal resistance, junction-to-ambient | RthJA | 35 | °C/W | D2PAK, when mounted on a standard 1 inch² area of FR-4 PCB with 2-oz copper | 2 | ||
| Forward transconductance | gfs | 7.8 | S | VDS = 25 V, ID = 4.5 A | 3 | ||
| Input capacitance | Ciss | 1370 | pF | VDS = 25 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Output capacitance | Coss | 156 | pF | VDS = 25 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Reverse transfer capacitance | Crss | 37 | pF | VDS = 25 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Equivalent output capacitance | Coss eq. | 93 | pF | VGS = 0 V, VDS = 0 to 480 V | 3 | ||
| Gate-source charge | Qgs | 10 | nC | 3 | |||
| Gate-drain charge | Qgd | 25 | nC | 3 | |||
| Turn-on delay time | td(on) | 20 | ns | VDD = 300 V, ID = 4 A, RG = 4.7 Ω, VGS = 10 V | 3 | ||
| Rise time | tr | 20 | ns | VDD = 300 V, ID = 4 A, RG = 4.7 Ω, VGS = 10 V | 3 | ||
| Turn-off delay time | td(off) | 55 | ns | VDD = 300 V, ID = 4 A, RG = 4.7 Ω, VGS = 10 V | 3 | ||
| Fall time | tf | 30 | ns | VDD = 300 V, ID = 4 A, RG = 4.7 Ω, VGS = 10 V | 3 | ||
| Reverse recovery time | trr | 570 | ns | ISD = 8 A, di/dt = 100 A/µs, VDD = 40 V, TJ = 150 °C | 4 | ||
| Reverse recovery charge | Qrr | 4.3 | μC | ISD = 8 A, di/dt = 100 A/µs, VDD = 40 V, TJ = 150 °C | 4 | ||
| Reverse recovery current | IRRM | 15 | A | ISD = 8 A, di/dt = 100 A/µs, VDD = 40 V, TJ = 150 °C | 4 |
CAD (KiCad official)
- Symbol:
STB10NK60ZT4 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263-2 (KiCad packages3D, STEP)
- 3D model files:
stb10nk60zt4-etched.step/stb10nk60zt4-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stb10nk60zt4.step/stb10nk60zt4.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (24 pp, sha256
2eb2f128e38c6290, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).