# ST36N10D-HXY

**HXY MOSFET** · MOSFETs · TO-252-2L

ST36N10D-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with gate-source voltage rated at ±20 V (VGS). |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for 100 V drain-source voltage (VDS) and 30 A continuous drain current at TC=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET, the reference terminal for VGS and VDS. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.2 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 |  |  | V | VGS=0V, ID=250μA | 2 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V, VGS=0V | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 37 | 48 | mΩ | VGS=10V, ID=10A | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 39 | 55 | mΩ | VGS=4.5V, ID=6A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 27 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 80 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=20A | 2 |
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Continuous Drain Current (TC=25℃) | ID@TC=25℃ |  |  | 30 | A | VGS @ 10V | 1 |
| Continuous Drain Current (TC=100℃) | ID@TC=100℃ |  |  | 13 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 80 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 30 | mJ |  | 1 |
| Total Power Dissipation (TC=25℃) | PD@TC=25℃ |  |  | 42 | W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  | 3.6 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `ST36N10D-HXY`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `st36n10d-hxy-etched.step` / `st36n10d-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `st36n10d-hxy.step` / `st36n10d-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/st36n10d-hxy-datasheet.pdf) (6 pp, sha256 `6fbc89c6178369ae`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/st36n10d-hxy-datasheet.pdf)