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ST3422A
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STANSON Tech MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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st3422a: specified limits as data (metadata.characteristics, 24 rows from the datasheet)
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ST3422A
STANSON Tech · MOSFETs · SOT-23-3L
ST3422A from STANSON Tech, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET, rated for VGSS ±20 V, with a gate threshold VGS(th) of 1 to 3 V at ID = 250 µA. |
| 2 | Source | passive | Source of the N-channel MOSFET, with a continuous source (diode conduction) current IS rated at 1.7 A. |
| 3 | Drain | passive | Drain of the N-channel MOSFET, rated for VDSS of 60 V and a continuous drain current ID of 6.0 A at TA = 25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STANSON Tech |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 6 | A | TA=25℃ | 2 | ||
| Continuous Drain Current | ID | 4.6 | A | TA=70℃ | 2 | ||
| Pulsed Drain Current | IDM | 20 | A | 2 | |||
| Continuous Source Current (Diode Conduction) | IS | 1.7 | A | 2 | |||
| Power Dissipation | PD | 2 | W | TA=25℃ | 2 | ||
| Power Dissipation | PD | 1.3 | W | TA=70℃ | 2 | ||
| Operation Junction Temperature | TJ | -55 | 150 | ℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 75 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V,ID=250uA | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS=VGS,ID=250uA | 3 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V,VGS=±20V | 3 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=48V,VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | uA | VDS=48V,VGS=0V, TJ=55℃ | 3 | ||
| Drain-source On-Resistance | RDS(on) | 28 | 38 | mΩ | VGS=10V,ID=6.0A | 3 | |
| Drain-source On-Resistance | RDS(on) | 35 | 45 | mΩ | VGS=4.5V,ID=2.5A | 3 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=1.7A,VGS=0V | 3 | ||
| Total Gate Charge | Qg | 10 | 22 | nC | VDS=15V, VGS=10V, ID≡6.7A | 3 | |
| Turn-On Time | td(on) | 8 | 15 | nS | VDD=15V, RL=15Ω, ID=1.0A, VGEN=10V, RG=6Ω | 3 | |
| Turn-On Rise Time | tr | 10 | 20 | nS | VDD=15V, RL=15Ω, ID=1.0A, VGEN=10V, RG=6Ω | 3 | |
| Turn-Off Time | td(off) | 20 | 40 | nS | VDD=15V, RL=15Ω, ID=1.0A, VGEN=10V, RG=6Ω | 3 | |
| Turn-Off Fall Time | tf | 11 | 20 | nS | VDD=15V, RL=15Ω, ID=1.0A, VGEN=10V, RG=6Ω | 3 |
CAD (KiCad official)
- Symbol:
ST3422A - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
st3422a-etched.step/st3422a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);st3422a.step/st3422a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STANSON Tech datasheet (6 pp, sha256
4cc35a120bb955b7, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ST3422A
**STANSON Tech** · MOSFETs · SOT-23-3L
ST3422A from STANSON Tech, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET, rated for VGSS ±20 V, with a gate threshold VGS(th) of 1 to 3 V at ID = 250 µA. |
| 2 | Source | passive | Source of the N-channel MOSFET, with a continuous source (diode conduction) current IS rated at 1.7 A. |
| 3 | Drain | passive | Drain of the N-channel MOSFET, rated for VDSS of 60 V and a continuous drain current ID of 6.0 A at TA = 25℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STANSON Tech |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 60 | V | | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current | ID | | | 6 | A | TA=25℃ | 2 |
| Continuous Drain Current | ID | | | 4.6 | A | TA=70℃ | 2 |
| Pulsed Drain Current | IDM | | | 20 | A | | 2 |
| Continuous Source Current (Diode Conduction) | IS | | | 1.7 | A | | 2 |
| Power Dissipation | PD | | | 2 | W | TA=25℃ | 2 |
| Power Dissipation | PD | | | 1.3 | W | TA=70℃ | 2 |
| Operation Junction Temperature | TJ | -55 | | 150 | ℃ | | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 2 |
| Thermal Resistance-Junction to Ambient | RθJA | | | 75 | ℃/W | | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS=0V,ID=250uA | 3 |
| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VDS=VGS,ID=250uA | 3 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V,VGS=±20V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS=48V,VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | uA | VDS=48V,VGS=0V, TJ=55℃ | 3 |
| Drain-source On-Resistance | RDS(on) | | 28 | 38 | mΩ | VGS=10V,ID=6.0A | 3 |
| Drain-source On-Resistance | RDS(on) | | 35 | 45 | mΩ | VGS=4.5V,ID=2.5A | 3 |
| Diode Forward Voltage | VSD | | | 1.2 | V | IS=1.7A,VGS=0V | 3 |
| Total Gate Charge | Qg | | 10 | 22 | nC | VDS=15V, VGS=10V, ID≡6.7A | 3 |
| Turn-On Time | td(on) | | 8 | 15 | nS | VDD=15V, RL=15Ω, ID=1.0A, VGEN=10V, RG=6Ω | 3 |
| Turn-On Rise Time | tr | | 10 | 20 | nS | VDD=15V, RL=15Ω, ID=1.0A, VGEN=10V, RG=6Ω | 3 |
| Turn-Off Time | td(off) | | 20 | 40 | nS | VDD=15V, RL=15Ω, ID=1.0A, VGEN=10V, RG=6Ω | 3 |
| Turn-Off Fall Time | tf | | 11 | 20 | nS | VDD=15V, RL=15Ω, ID=1.0A, VGEN=10V, RG=6Ω | 3 |
## CAD (KiCad official)
- Symbol: `ST3422A`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `st3422a-etched.step` / `st3422a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `st3422a.step` / `st3422a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STANSON Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588907496194904064) (6 pp, sha256 `4cc35a120bb955b7`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/st3422a-datasheet.pdf)