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ST25DV64K-IER8T3

STMicroelectronics · RF Chips · TSSOP-8

ST25DV64K-IER8T3 from STMicroelectronics, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 V_EH power_out Energy harvesting analog output pin that can power external components, referenced to VSS.
2 AC0 passive Antenna coil connection to the RF interface (internal tuning capacitance 28.5 pF).
3 AC1 passive Antenna coil connection to the RF interface (internal tuning capacitance 28.5 pF).
4 VSS power_in Ground, the reference for VCC supply voltage and V_EH analog output voltage.
5 SDA bidirectional I2C serial data, open drain output that needs a pull-up resistor to VCC and may be wire-OR'ed with other open drain or open collector signals on the bus.
6 SCL input I2C serial clock input that strobes all data in and out of the device, needing a pull-up resistor to VCC.
7 GPO output Interrupt output (open drain on the 8-pin packages) configurable on RF events such as field change, memory write, activity and Fast Transfer end.
8 VCC power_in Supply voltage pin connected to an external DC supply, 1.8 V to 5.5 V single supply.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TSSOP-8
Category RF & Radio
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage temperature (TSSOP8) TSTG -65 150 °C 138
I2C input or output voltage range VIO -0.5 6.5 V 138
Supply voltage VCC (absolute maximum) VCC -0.5 6.5 V 138
DC output current on pin SDA IOL_MAX_SDA 5 mA when equal to 0 138
DC output current on pin GPO open drain IOL_MAX_GPO_OD 1.5 mA when equal to 0 138
RF input voltage amplitude peak to peak between AC0 and AC1 VMAX_1 11 V VSS pin left floating 138
AC voltage between AC0 and VSS, or AC1 and VSS VMAX_2 -0.5 5.5 V 138
Electrostatic discharge voltage (human body model) VESD 2000 V All pins 138
I2C supply voltage VCC 1.8 5.5 V 139
Ambient operating temperature, I2C (SO8N, TSSOP8) TA -40 125 °C I2C interface 139
Ambient operating temperature, RF interface (Range 8) TA -40 105 °C Range 8, RF interface 148
Input capacitance (SDA) CIN 8 pF SDA 139
Input capacitance (other pins) CIN 6 pF Other pins 139
Input leakage current (SCL, SDA) ILI -0.1 0.03 0.1 µA VIN = VSS or VCC, device in Standby mode 141
Output leakage current (SDA) ILO -0.1 0.03 0.1 µA SDA in Hi-Z, external voltage applied on SDA: VSS or VCC 141
Operating supply current, device select E2 address, read ICC_E2 126 180 µA VCC = 1.8 V, fC = 1MHz (rise/fall time < 50 ns) 141
Operating supply current, device select E2 address, read ICC_E2 230 260 µA VCC = 3.3 V, fC = 1MHz (rise/fall time < 50 ns) 141
Operating supply current, device select E2 address, read ICC_E2 510 550 µA VCC = 5.5 V, fC = 1MHz (rise/fall time < 50 ns) 141
Operating supply current, device select MB address, read ICC_MB 126 180 µA VCC = 1.8 V, fC = 1MHz (rise/fall time < 50 ns) 141
Operating supply current, device select MB address, read ICC_MB 230 260 µA VCC = 3.3 V, fC = 1MHz (rise/fall time < 50 ns) 141
Operating supply current, device select MB address, read ICC_MB 510 550 µA VCC = 5.5 V, fC = 1MHz (rise/fall time < 50 ns) 141
Operating supply current, device select E2 address, write ICC0 120 310 µA VCC = 1.8 V, fC = 1MHz (rise/fall time < 50 ns) 141
Operating supply current, device select E2 address, write ICC0 120 350 µA VCC = 3.3 V, fC = 1MHz (rise/fall time < 50 ns) 141
Operating supply current, device select E2 address, write ICC0 140 450 µA VCC = 5.5 V, fC = 1MHz (rise/fall time < 50 ns) 141
Static standby supply current after power ON or device select stop or time out ICC1_PON 78 110 µA LPD = 0, VCC = 1.8 V 142
Static standby supply current after power ON or device select stop or time out ICC1_PON 82 110 µA LPD = 0, VCC = 3.3 V 142
Static standby supply current after power ON or device select stop or time out ICC1_PON 95 130 µA LPD = 0, VCC = 5.5 V 142
Input low voltage (SDA, SCL) VIL -0.45 V VCC = 1.8 V; max is 0.25 VCC as printed 142
Output low voltage SDA (1 MHz) VOL_SDA 0.05 0.4 V IOL = 1 mA, VCC = 1.8 V 142
Output low voltage SDA (1 MHz) VOL_SDA 0.08 0.4 V IOL = 2.1 mA, VCC = 3.3 V 142
Output low voltage SDA (1 MHz) VOL_SDA 0.1 0.4 V IOL = 3 mA, VCC = 5.5 V 142
Device select acknowledge (power-up) VCC_Power_up 1.48 1.7 V Device select acknowledge, fC = 100 kHz 142
SCL clock frequency fC 0.05 1000 kHz Test conditions per Table 243 143
Clock pulse width high tCHCL 0.26 25000 µs Test conditions per Table 243; max is tCHCL timeout 143
Clock pulse width low tCLCH 0.5 25000 µs Test conditions per Table 243; max is tCLCH timeout 143
I2C timeout on Start condition tSTART_OUT 35 ms Test conditions per Table 243 143
SDA (out) fall time tDL1DL2 20 120 ns Test conditions per Table 243 143
Data in set up time tDXCX 0 ns Test conditions per Table 243 143
Data in hold time tCLDX 0 ns Test conditions per Table 243 143
Data out hold time tCLQX 100 ns Test conditions per Table 243 143
Clock low to next data valid (access time) tCLQV 450 ns Test conditions per Table 243 143
Start condition set up time tCHDX 250 ns Test conditions per Table 243 143
Start condition hold time tDLCL 0.25 35000 µs Test conditions per Table 243; max is tDLCL timeout 144
Stop condition set up time tCHDH 250 ns Test conditions per Table 243 144
Time between Stop condition and next Start condition tDHDL 500 ns Test conditions per Table 243 144
I2C write time tW 5.5 ms Test conditions per Table 243; 1 to 4 bytes in same EEPROM page 144
Boot time, RF OFF and LPD = 0 tbootDC 0.6 ms RF OFF and LPD = 0 144
Output low voltage (GPO open drain) VOL_GPO_OD 0.28 0.4 V IOL = 1 mA, VCC = 1.8 V 146
Output low voltage (GPO open drain) VOL_GPO_OD 0.22 0.4 V IOL = 1 mA, VCC = 3.3 V 146
Output low voltage (GPO open drain) VOL_GPO_OD 0.21 0.4 V IOL = 1 mA, VCC = 5.5 V 146
Output leakage (GPO open drain) IL_GPO_OD -0.15 0.06 0.15 µA GPO in Hi-Z, external voltage applied on GPO: VSS or VCC 146
External RF signal frequency fCC 13.553 13.56 13.567 MHz 147
Operating field according to ISO H_ISO 150 5000 mA/m Range 8, TA = -40 °C to 105 °C 147
10% carrier modulation index MI 10 30 % MI=(A-B)/(A+B); 150 mA/m > H_ISO > 1000 mA/m 147
100% carrier modulation index MI 95 100 % MI=(A-B)/(A+B) 147
Time for ST25DVxxx response t1 318.6 320.9 323.3 µs 4352/FC 147
Internal tuning capacitor CTUN 26.5 28.5 30.5 pF f = 13.56 MHz 147
RF OFF time (chip reset) tRF_OFF 2 ms Chip reset 147

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Grey color indicates the states where power is delivered on V_EH pin. 43

CAD (KiCad official)

  • Symbol: ST25DV64K-IER8T3
  • Footprint: Package_SO:TSSOP-8_4.4x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: st25dv64k-ier8t3-etched.step / st25dv64k-ier8t3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); st25dv64k-ier8t3.step / st25dv64k-ier8t3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (200 pp, sha256 ab48d75d35c11396, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF