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verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 4d ago

ST16N10-HXY

HXY MOSFET · MOSFETs · TO-252-2L

ST16N10-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated ±20 V per the absolute maximum ratings.
2 D passive Drain terminal; drain-source voltage is rated 100 V and continuous drain current 15 A at TC=25℃.
3 S passive Source terminal; the reference for VGS and the source-drain diode, with continuous source current rated 12 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance (VGS=10V) RDS(ON) 100 112 mΩ VGS=10V , ID=10A 2
Static Drain-Source On-Resistance (VGS=4.5V) RDS(ON) 117 130 mΩ VGS=4.5V , ID=8A 2
Gate Threshold Voltage VGS(th) 1 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current (TJ=25℃) IDSS 1 uA VDS=80V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current (TJ=55℃) IDSS 5 uA VDS=80V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Continuous Source Current IS 12 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 24 A 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (TC=25℃) ID@TC=25℃ 15 A VGS @ 10V 1
Continuous Drain Current (TC=100℃) ID@TC=100℃ 7.7 A VGS @ 10V 1
Pulsed Drain Current IDM 24 A 1
Single Pulse Avalanche Energy EAS 6.1 mJ 1
Avalanche Current IAS 11 A 1
Total Power Dissipation (TC=25℃) PD@TC=25℃ 34.7 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1

CAD (KiCad official)

  • Symbol: ST16N10-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: st16n10-hxy-etched.step / st16n10-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); st16n10-hxy.step / st16n10-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 2014e3e811222f4f, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF