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SST3904T116

Public Made by Adom

by adom

ROHM Semicon Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SST3904T116

ROHM Semicon · Bipolar (BJT) · SOT-23

SST3904T116 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter terminal of the NPN transistor; absolute maximum emitter-base voltage VEBO is 6 V and collector current IC is limited to 0.2 A (Ta = 25°C).
2 Base passive Base terminal of the NPN transistor; emitter-base breakdown voltage BVEBO is minimum 6 V at IE = 10 µA, and base-emitter saturation voltage VBE(sat) is 0.65 to 0.95 V at IC/IB = 50 mA/5 mA.
3 Collector passive Collector terminal of the NPN transistor; absolute maximum collector-base voltage VCBO is 60 V and collector-emitter voltage VCEO is 40 V (Ta = 25°C).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage BVCBO 60 V IC = 10µA 1
Collector-emitter breakdown voltage BVCEO 40 V IC = 1mA 1
Emitter-base breakdown voltage BVEBO 6 V IE = 10µA 1
Collector cutoff current ICES 50 nA VCB = 30V 1
Emitter cutoff current IEBO 50 nA VEB = 3V 1
Base-emitter saturation voltage VBE(sat) 0.65 0.85 V 1
Base-emitter saturation voltage (second printed max value) VBE(sat) 0.95 V 1
Collector-emitter saturation voltage VCE(sat) 0.3 V IC/IB = 50mA/5mA 1
Collector-emitter saturation voltage VCE(sat) 0.2 V IC/IB = 10mA/1mA 1
DC current transfer ratio hFE 30 VCE = 1V, IC = 0.1mA 1
DC current transfer ratio hFE 60 VCE = 1V, IC = 1mA 1
DC current transfer ratio hFE 100 300 VCE = 1V, IC = 10mA 1
DC current transfer ratio hFE 70 VCE = 1V, IC = 50mA 1
DC current transfer ratio hFE 40 VCE = 1V, IC = 100mA 1
Transition frequency fT 300 MHz VCE = 20V, IE = −10mA, f = 100MHz 1
Collector output capacitance Cob 4 pF VCB = 10V, f = 100kHz 1
Emitter input capacitance Cib 8 pF VEB = 0.5V, f = 100kHz 1
Delay time td 35 ns VCC = 3V, VBE(OFF) = 0.5V, IC = 10mA, IB1 = 1mA 1
Rise time tr 35 ns VCC = 3V, VBE(OFF) = 0.5V, IC = 10mA, IB1 = 1mA 1
Storage time tstg 200 ns VCC = 3V, IC = 10mA, IB1 = −IB2 = 1mA 1
Fall time tf 50 ns VCC = 3V, IC = 10mA, IB1 = −IB2 = 1mA 1
Collector-base voltage VCBO 60 V Ta = 25°C 1
Collector-emitter voltage VCEO 40 V Ta = 25°C 1
Emitter-base voltage VEBO 6 V Ta = 25°C 1
Collector current IC 0.2 A Ta = 25°C 1
Collector power dissipation PC 0.35 W Ta = 25°C 1
Collector power dissipation (footnote value) PC 0.2 W Ta = 25°C, mounted on a 7 x 5 x 0.6 mm ceramic board 1
Junction temperature Tj 150 °C Ta = 25°C 1
Storage temperature Tstg -55 150 °C Ta = 25°C 1

CAD (KiCad official)

  • Symbol: SST3904T116
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sst3904t116-etched.step / sst3904t116-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sst3904t116.step / sst3904t116.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (5 pp, sha256 1ef8092e11cac55c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF