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SST25VF016B-50-4I-S2AF

Public Made by Adom

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Microchip Tech NOR FLASH, SOIC-8-208mil. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SST25VF016B-50-4I-S2AF

Microchip Tech · NOR FLASH · SOIC-8-208mil

SST25VF016B-50-4I-S2AF from Microchip Tech, in a SOIC-8-208mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CE# input Chip Enable: the device is enabled by a high-to-low transition on CE#, and CE# must remain low for the duration of any command sequence.
2 SO tri_state Serial Data Output: data is shifted out on the falling edge of the serial clock, and the pin outputs flash busy status during AAI programming when reconfigured as RY/BY#; it is high-impedance during Hold mode.
3 WP# input Write Protect: used to enable/disable the BPL bit in the status register.
4 VSS power_in Ground.
5 SI input Serial Data Input: commands, addresses, or data are transferred serially into the device and latched on the rising edge of the serial clock.
6 SCK input Serial Clock: provides the timing of the serial interface, with commands, addresses, or input data latched on the rising edge and output data shifted out on the falling edge.
7 HOLD# input Hold: temporarily stops serial communication with the SPI flash memory without resetting the device.
8 VDD power_in Power Supply: provides 2.7-3.6V for SST25VF016B.

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package SOIC-8-208mil
Category Memory
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Read Current IDDR 10 mA CE#=0.1 VDD/0.9 VDD@25 MHz, SO=open 19
Read Current IDDR2 15 mA CE#=0.1 VDD/0.9 VDD@50 MHz, SO=open 19
Read Current IDDR3 20 mA CE#=0.1 VDD/0.9 VDD@50 MHz, SO=open 19
Program and Erase Current IDDW 30 mA CE#=VDD 19
Standby Current ISB 20 µA CE#=VDD, VIN=VDD or VSS 19
Input Leakage Current ILI 1 µA VIN=GND to VDD, VDD=VDD Max 19
Output Leakage Current ILO 1 µA VOUT=GND to VDD, VDD=VDD Max 19
Input Low Voltage VIL 0.8 V VDD=VDD Min 19
Output Low Voltage VOL 0.2 V IOL=100 µA, VDD=VDD Min 19
Output Low Voltage VOL2 0.4 V IOL=1.6 mA, VDD=VDD Min 19
Output Pin Capacitance COUT 12 pF VOUT = 0V 20
Input Capacitance CIN 6 pF VIN = 0V 20
Endurance NEND 10000 Cycles JEDEC Standard A117 20
Data Retention TDR 100 Years JEDEC Standard A103 20
Serial Clock Frequency FCLK 50 MHz 50 MHz column 20
Serial Clock High Time TSCKH 9 ns 50 MHz column 20
Serial Clock Low Time TSCKL 9 ns 50 MHz column 20
Serial Clock Rise Time (Slew Rate) TSCKR 0.1 V/ns 50 MHz column 20
Serial Clock Fall Time (Slew Rate) TSCKF 0.1 V/ns 50 MHz column 20
CE# Active Setup Time TCES 5 ns 50 MHz column, relative to SCK 20
CE# Active Hold Time TCEH 5 ns 50 MHz column 20
CE# Not Active Setup Time TCHS 5 ns 50 MHz column 20
CE# Not Active Hold Time TCHH 5 ns 50 MHz column 20
CE# High Time TCPH 50 ns 50 MHz column 20
CE# High to High-Z Output TCHZ 8 ns 50 MHz column 20
SCK Low to Low-Z Output TCLZ 0 ns 50 MHz column 20
Data In Setup Time TDS 2 ns 50 MHz column 20
Data In Hold Time TDH 5 ns 50 MHz column 20
HOLD# Low Setup Time THLS 5 ns 50 MHz column 20
HOLD# High Setup Time THHS 5 ns 50 MHz column 20
HOLD# Low Hold Time THLH 5 ns 50 MHz column 20
HOLD# High Hold Time THHH 5 ns 50 MHz column 20
HOLD# Low to High-Z Output THZ 8 ns 50 MHz column 20
HOLD# High to Low-Z Output TLZ 8 ns 50 MHz column 20
Output Hold from SCK Change TOH 0 ns 50 MHz column 20
Output Valid from SCK TV 8 ns 50 MHz column 20
Sector-Erase TSE 25 ms 50 MHz column 20
Block-Erase TBE 25 ms 50 MHz column 20
Chip-Erase TSCE 50 ms 50 MHz column 20
Byte-Program TBP 10 µs 50 MHz column 20
Supply Voltage (Industrial range) VDD 2.7 3.6 V Industrial range 19
Ambient Temperature (Industrial range) -40 85 °C Industrial range 19
Temperature Under Bias -55 125 °C 19
Storage Temperature -65 150 °C 19
DC Voltage on Any Pin to Ground Potential -0.5 V to Ground Potential; upper limit printed as VDD+0.5V 19
Transient Voltage on Any Pin to Ground Potential -2 V <20 ns; upper limit printed as VDD+2.0V 19
Package Power Dissipation Capability 1 W TA = 25°C 19
Surface Mount Solder Reflow Temperature 260 °C for 10 seconds 19
Output Short Circuit Current 50 mA Output shorted for no more than one second; no more than one output shorted at a time 19

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin S2AF/S2AE1 = SOIC (200 mil Body), 8-lead 1. Suffix E = Matte Tin finish 28

CAD (KiCad official)

  • Symbol: SST25VF016B-50-4I-S2AF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8-208mil (KiCad packages3D, STEP)
  • 3D model files: sst25vf016b-50-4i-s2af-etched.step / sst25vf016b-50-4i-s2af-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sst25vf016b-50-4i-s2af.step / sst25vf016b-50-4i-s2af.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (30 pp, sha256 066d927d44031dca, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF