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SST2222AT116

Public Made by Adom

by adom

ROHM Semicon Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SST2222AT116

ROHM Semicon · Bipolar (BJT) · SOT-23

SST2222AT116 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter terminal of the NPN transistor; the datasheet gives only device-level absolute maximum ratings (VEBO 6 V, IC 0.6 A), not a pin-specific limit.
2 Base passive Base terminal of the NPN transistor; the datasheet gives only device-level absolute maximum ratings (VEBO 6 V, IC 0.6 A), not a pin-specific limit.
3 Collector passive Collector terminal of the NPN transistor; the datasheet gives device-level absolute maximum ratings of VCBO 75 V, VCEO 40 V and IC 0.6 A, not a pin-specific limit.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 75 V 1
Collector-emitter voltage VCEO 40 V 1
Emitter-base voltage VEBO 6 V 1
Collector current IC 0.6 A 1
Collector power dissipation PC 0.2 W When mounted on a 7 x 5 x 0.6 mm ceramic board 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -55 150 °C 1
Collector-base breakdown voltage BVCBO 75 V IC =10µA 1
Collector-emitter breakdown voltage BVCEO 40 V IC =10mA 1
Emitter-base breakdown voltage BVEBO 6 V IE =10µA 1
Collector cutoff current ICBO 100 nA VCB = 60V 1
Emitter cutoff current IEBO 100 nA VEB = 3V 1
Base-emitter saturation voltage VBE(sat) 0.6 1.2 V 1
Base-emitter saturation voltage VBE(sat) 2 V 1
Collector-emitter saturation voltage VCE(sat) 1 V IC/IB =500mA/50mA 1
Collector-emitter saturation voltage VCE(sat) 0.3 V IC/IB =150mA/15mA 1
DC current transfer ratio hFE 40 VCE =10V, IC =500mA 1
DC current transfer ratio hFE 50 VCE =10V, IC =1mA 1
DC current transfer ratio hFE 35 VCE =10V, IC =0.1mA 1
DC current transfer ratio hFE 100 300 VCE =10V, IC =150mA 1
Transition frequency fT 300 MHz VCE =20V, IC =−20mA, f =100MHz 1
Output capacitance Cob 8 pF VCB =10V, f =100kHz 1
Emitter input capacitance Cib 25 pF VEB =0.5V, f =100kHz 1
Delay time td 10 ns VCC =30V, VBE(OFF) =0.5V, IC =150mA, IB1 =15mA 1
Rise time tr 25 ns VCC =30V, VBE(OFF) =0.5V, IC =150mA, IB1 =15mA 1
Storage time tstg 225 ns VCC =30V, IC =150mA, IB1 =−IB2 =15mA 1
Fall time tf 60 ns VCC =30V, IC =150mA, IB1 =−IB2 =15mA 1

CAD (KiCad official)

  • Symbol: SST2222AT116
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sst2222at116-etched.step / sst2222at116-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sst2222at116.step / sst2222at116.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (4 pp, sha256 9ae4e2a735ff4326, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF