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SST2222AHZGT116

Public Made by Adom

by adom

ROHM Semicon Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SST2222AHZGT116

ROHM Semicon · Bipolar (BJT) · SOT-23

SST2222AHZGT116 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter of the NPN transistor; VEBO maximum 6 V and IC maximum 600 mA.
2 Base passive Base of the NPN transistor; base-emitter saturation voltage max 1.2 V at IC = 150 mA, IB = 15 mA.
3 Collector passive Collector of the NPN transistor; VCBO 75 V, VCEO 40 V, IC 600 mA maximum.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 75 V 1
Collector-emitter voltage VCEO 40 V 1
Emitter-base voltage VEBO 6 V 1
Collector current IC 600 mA 1
Power dissipation PD 200 mW *1 Each terminal mounted on a reference land. 1
Junction temperature Tj 150 ℃ 1
Range of storage temperature Tstg -55 150 ℃ 1
Collector-base breakdown voltage BVCBO 75 V IC = 10μA 2
Collector-emitter breakdown voltage BVCEO 40 V IC = 10mA 2
Emitter-base breakdown voltage BVEBO 6 V IE = 10μA 2
Collector cut-off current ICBO 100 nA VCB = 60V 2
Emitter cut-off current IEBO 100 nA VEB = 3V 2
Collector-emitter saturation voltage VCE(sat)1 300 mV IC = 150mA, IB = 15mA 2
Collector-emitter saturation voltage VCE(sat)2 1 V IC = 500mA, IB = 50mA (*2 Pulsed) 2
Base-emitter saturation voltage VBE(sat)1 0.6 1.2 V IC = 150mA, IB = 15mA 2
Base-emitter saturation voltage VBE(sat)2 2 V IC = 500mA, IB = 50mA (*2 Pulsed) 2
DC current gain hFE1 35 - VCE = 10V, IC = 100μA 2
DC current gain hFE2 50 - VCE = 10V, IC = 1mA 2
DC current gain hFE3 75 - VCE = 10V, IC = 10mA 2
DC current gain hFE5 100 300 - VCE = 10V, IC = 150mA (*2 Pulsed) 2
DC current gain hFE6 40 - VCE = 10V, IC = 500mA (*2 Pulsed) 2
Transition frequency fT 300 MHz VCE = 20V, IE = -20mA, f = 100MHz (*2 Pulsed) 2
Output capacitance Cob 8 pF VCB = 10V, IE = 0A, f = 100kHz 2
Input capacitance Cib 25 pF VBE = 500mV, f = 100kHz 2
Delay time td 10 ns VCC ⋍ 30V, IC = 150mA, IB1 = 15mA, RL = 200Ω, VBE(off) = -500mV, See test circuit 2
Rise time tr 25 ns 2
Storage time tstg 225 ns VCC ⋍ 30V, IC = 150mA, IB1 = 15mA, IB2 = -15mA, RL = 200Ω, See test circuit 2
Fall time tf 60 ns 2

CAD (KiCad official)

  • Symbol: SST2222AHZGT116
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sst2222ahzgt116-etched.step / sst2222ahzgt116-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sst2222ahzgt116.step / sst2222ahzgt116.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (8 pp, sha256 f97ec88a4203679d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF