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SSP45N20B-VB

VBsemi Elec · MOSFETs · TO-220AB

SSP45N20B-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±25 V (absolute maximum), with gate-body leakage tested at VGS = ±20 V.
2 D passive Drain (also connected to the tab); drain-source voltage is rated at 200 V with continuous drain current of 50 A at TC = 25 °C.
3 S passive Source; connects to the source terminal of the N-channel MOSFET, with pulsed source current ISM of 36 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V TA = 25 °C 1
Gate-Source Voltage VGS -25 25 V TA = 25 °C 1
Pulsed Drain Current IDM 150 A 1
Single Pulse Avalanche Current IAS 20 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 20 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 166 W TC = 25 °C 1
Maximum Power Dissipation PD 3.12 W TA = 25 °C, 1" square PCB 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient (PCB Mount) RthJA 40 °C/W 1" square PCB, FR-4 1
Junction-to-Case (Drain) RthJC 0.75 °C/W 1
Drain-Source Breakdown Voltage VDS 200 V VGS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 200 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 200 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 40 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.048 Ω VGS = 10 V, ID = 3 A 2
Drain-Source On-State Resistance RDS(on) 0.07 Ω VGS = 10 V, ID = 3 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.092 Ω VGS = 6 V, ID = 3 A 2
Forward Transconductance gfs 35 S VDS = 15 V, ID = 3 A 2
Output Capacitance Coss 180 pF VGS = 0 V, VDS = 25 V, F = 1 MHz 2
Reverse Transfer Capacitance Crss 80 pF VGS = 0 V, VDS = 25 V, F = 1 MHz 2
Gate-Source Charge Qgs 8 nC VDS = 100 V, VGS = 10 V, ID = 3 A 2
Gate-Drain Charge Qgd 12 nC VDS = 100 V, VGS = 10 V, ID = 3 A 2
Pulsed Current ISM 36 A TC = 25 °C 2
Diode Forward Voltage VSD 0.9 1.5 V IF = 3 A, VGS = 0 V 2
Reverse Recovery Time trr 180 250 ns IF = 3 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: SSP45N20B-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: ssp45n20b-vb-etched.step / ssp45n20b-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssp45n20b-vb.step / ssp45n20b-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (6 pp, sha256 5663e7d2b55ccd94, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF