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SSM6P05FU-VB

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VBsemi Elec MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SSM6P05FU-VB

VBsemi Elec · MOSFETs · SC-70-6

SSM6P05FU-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1 (VDS rating -20 V).
2 G1 input Gate of P-channel MOSFET 1 (VGS max ±12 V).
3 D2 passive Drain of P-channel MOSFET 2 (VDS -20 V, RDS(on) 0.155 Ω at VGS -4.5 V).
4 S2 passive Source of P-channel MOSFET 2 (VDS rating -20 V).
5 G2 input Gate of P-channel MOSFET 2 (VGS max ±12 V).
6 D1 passive Drain of P-channel MOSFET 1 (VDS -20 V, RDS(on) 0.155 Ω at VGS -4.5 V).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SC-70-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V TA = 25 °C 1
Gate-Source Voltage VGS -12 12 V TA = 25 °C 1
Pulsed Drain Current IDM -2.5 A TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 93 110 °C/W t ≤ 5 s, surface mounted on 1" x 1" FR4 1
Maximum Junction-to-Foot RthJF 75 90 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -1.5 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = - 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -8 A VDS ≤ - 5 V, VGS = - 4.5V 2
Total Gate Charge Qg 5.2 8 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 2.6 A 2
Gate Resistance Rg 2 7 14 Ω f = 1 MHz 2
Body Diode Voltage VSD 0.85 1.2 V IS = - 2.1 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 13 20 ns IF = - 2.1 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Forward Transconductance gfs 5 S VDS = - 15 V, ID = - 2.6 A 2
Input Capacitance Ciss 210 pF VDS = - 15 V, VGS = 0 V, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: SSM6P05FU-VB
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6 (KiCad packages3D, STEP)
  • 3D model files: ssm6p05fu-vb-etched.step / ssm6p05fu-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssm6p05fu-vb.step / ssm6p05fu-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 13c352d977ec3695, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF