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SSM3K7002KF

Public Made by Adom

by adom

TOSHIBA MOSFETs, TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SSM3K7002KF

TOSHIBA · MOSFETs · TO-236-3(SOT-23-3)

SSM3K7002KF from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-source voltage rated at ±20 V absolute maximum, with threshold voltage 1.1 V min to 2.1 V max at ID = 250 µA.
2 Source passive Source terminal of the N-channel MOSFET, normally connected to circuit ground in low-side switching.
3 Drain passive Drain terminal of the N-channel MOSFET; drain-source voltage rated at 60 V and DC drain current at 400 mA absolute maximum.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TO-236-3(SOT-23-3)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 60 V Ta = 25 °C 2
Gate-source voltage VGSS -20 20 V Ta = 25 °C 2
Drain current (DC) ID 400 mA Ta = 25 °C 2
Drain current (pulsed) IDP 1200 mA pulse width ≤ 10 µs, Duty ≤ 1 % 2
Power dissipation (Note 3) PD 270 mW Device mounted on FR4 board (Cu pad: 0.8 mm2 × 3) 2
Power dissipation (Note 4) PD 900 mW Device mounted on FR4 board (Cu pad: 645 mm2) 2
Channel temperature Tch 150 °C 2
Storage temperature Tstg -55 150 °C 2
Gate leakage current IGSS -1 1 µA VDS = 0 V, VGS = ±16 V 3
Drain cut-off current IDSS 10 µA VDS = 60 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 60 V ID = 250 µA, VGS = 0 V 3
Gate threshold voltage Vth 1.1 2.1 V VDS = VGS, ID = 250 µA 3
Drain-source on-resistance RDS(ON) 1.2 1.75 Ω ID = 100 mA, VGS = 4.5 V 3
Drain-source on-resistance RDS(ON) 1.15 1.65 Ω ID = 100 mA, VGS = 5.0 V 3
Drain-source on-resistance RDS(ON) 1.05 1.5 Ω ID = 100 mA, VGS = 10 V 3
Forward transfer admittance /Yfs/ 1 S VDS = 10 V, ID = 200 mA 3
Input capacitance Ciss 26 40 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 3
Reverse transfer capacitance Crss 1.3 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 3
Output capacitance Coss 5.5 11 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 3
Total gate charge Qg 0.39 0.6 nC VDD = 30 V, ID = 200 mA, VGS = 4.5 V 3
Diode forward voltage VDSF -0.79 -1.1 V ID = -115 mA, VGS = 0 V 4

CAD (KiCad official)

  • Symbol: SSM3K7002KF
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
  • 3D model files: ssm3k7002kf-etched.step / ssm3k7002kf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssm3k7002kf.step / ssm3k7002kf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (8 pp, sha256 88b3d30bd8219b53, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF