component
SSM3K44MFV
Public Made by Adomby adom
TOSHIBA MOSFETs, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SSM3K44MFV
TOSHIBA · MOSFETs · SOT-723
SSM3K44MFV from TOSHIBA, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage rated ±20 V (VGSS) with Vth of 0.8 to 1.5 V at VDS = 3 V, ID = 0.1 mA. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET, common reference for the gate and drain voltages. |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-source voltage rated 30 V (VDSS) and drain current 100 mA DC / 200 mA pulse. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-723 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -1 | 1 | µA | VGS = ±14 V, VDS = 0 V | 2 | |
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | ID = 0.1 mA, VGS = 0 V | 2 | ||
| Drain cut-off current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Gate threshold voltage | Vth | 0.8 | 1.5 | V | VDS = 3 V, ID = 0.1 mA | 2 | |
| Forward transfer admittance | Yfs | 25 | mS | VDS = 3 V, ID = 10 mA | 2 | ||
| Drain-source on-resistance | RDS(ON) | 2.2 | 4 | Ω | ID = 10 mA, VGS = 4 V | 2 | |
| Drain-source on-resistance | RDS(ON) | 4 | 7 | Ω | ID = 10 mA, VGS = 2.5 V | 2 | |
| Drain-source voltage | VDSS | 30 | V | Ta = 25°C | 1 | ||
| Gate-source voltage | VGSS | -20 | 20 | V | Ta = 25°C | 1 | |
| Drain current DC | ID | 100 | mA | Ta = 25°C | 1 | ||
| Drain current pulse | IDP | 200 | mA | Ta = 25°C | 1 | ||
| Drain power dissipation | PD | 150 | mW | Ta = 25°C, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm) | 1 | ||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Input capacitance | Ciss | 8.5 | pF | VDS = 3 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse transfer capacitance | Crss | 5.3 | pF | VDS = 3 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output capacitance | Coss | 9.4 | pF | VDS = 3 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Turn-on time | ton | 50 | ns | VDD = 5 V, ID = 10 mA, VGS = 0 to 5 V | 2 | ||
| Turn-off time | toff | 200 | ns | VDD = 5 V, ID = 10 mA, VGS = 0 to 5 V | 2 |
CAD (KiCad official)
- Symbol:
SSM3K44MFV - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
ssm3k44mfv-etched.step/ssm3k44mfv-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3k44mfv.step/ssm3k44mfv.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (5 pp, sha256
1aed235fd5244afb, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SSM3K44MFV
**TOSHIBA** · MOSFETs · SOT-723
SSM3K44MFV from TOSHIBA, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage rated ±20 V (VGSS) with Vth of 0.8 to 1.5 V at VDS = 3 V, ID = 0.1 mA. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET, common reference for the gate and drain voltages. |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-source voltage rated 30 V (VDSS) and drain current 100 mA DC / 200 mA pulse. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-723 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -1 | | 1 | µA | VGS = ±14 V, VDS = 0 V | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 30 | | | V | ID = 0.1 mA, VGS = 0 V | 2 |
| Drain cut-off current | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Gate threshold voltage | Vth | 0.8 | | 1.5 | V | VDS = 3 V, ID = 0.1 mA | 2 |
| Forward transfer admittance | Yfs | 25 | | | mS | VDS = 3 V, ID = 10 mA | 2 |
| Drain-source on-resistance | RDS(ON) | | 2.2 | 4 | Ω | ID = 10 mA, VGS = 4 V | 2 |
| Drain-source on-resistance | RDS(ON) | | 4 | 7 | Ω | ID = 10 mA, VGS = 2.5 V | 2 |
| Drain-source voltage | VDSS | | | 30 | V | Ta = 25°C | 1 |
| Gate-source voltage | VGSS | -20 | | 20 | V | Ta = 25°C | 1 |
| Drain current DC | ID | | | 100 | mA | Ta = 25°C | 1 |
| Drain current pulse | IDP | | | 200 | mA | Ta = 25°C | 1 |
| Drain power dissipation | PD | | | 150 | mW | Ta = 25°C, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm) | 1 |
| Channel temperature | Tch | | | 150 | °C | | 1 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 1 |
| Input capacitance | Ciss | | 8.5 | | pF | VDS = 3 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse transfer capacitance | Crss | | 5.3 | | pF | VDS = 3 V, VGS = 0 V, f = 1 MHz | 2 |
| Output capacitance | Coss | | 9.4 | | pF | VDS = 3 V, VGS = 0 V, f = 1 MHz | 2 |
| Turn-on time | ton | | 50 | | ns | VDD = 5 V, ID = 10 mA, VGS = 0 to 5 V | 2 |
| Turn-off time | toff | | 200 | | ns | VDD = 5 V, ID = 10 mA, VGS = 0 to 5 V | 2 |
## CAD (KiCad official)
- Symbol: `SSM3K44MFV`
- Footprint: `Package_TO_SOT_SMD:SOT-723`
- 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `ssm3k44mfv-etched.step` / `ssm3k44mfv-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm3k44mfv.step` / `ssm3k44mfv.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](docs/ssm3k44mfv-datasheet.pdf) (5 pp, sha256 `1aed235fd5244afb`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ssm3k44mfv-datasheet.pdf)