component
SSM3K361R.LF
Public Made by Adomby adom
TOSHIBA MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSSM3K361R.LF
TOSHIBA · MOSFETs · SOT-23-3
SSM3K361R.LF from TOSHIBA, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the absolute maximum gate-source voltage VGSS is ±20 V. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET; the source-drain diode forward voltage VDSF is -0.9 V typ. and -1.5 V max. at ID = -3.5 A, VGS = 0 V. |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET; the absolute maximum drain-source voltage VDSS is 100 V and the DC drain current ID is 3.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 100 | V | 2 | |||
| Gate-source voltage | VGSS | -20 | 20 | V | 2 | ||
| Drain current (DC) | ID | 3.5 | A | 2 | |||
| Drain current (pulsed) | IDP | 14 | A | Pulse width ≤ 10 ms, Duty ≤ 1 % | 2 | ||
| Power dissipation | PD | 1.2 | W | Device mounted on 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm²) | 2 | ||
| Power dissipation (t = 10 s) | PD | 2.4 | W | t = 10 s; device mounted on 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm²) | 2 | ||
| Single-pulse avalanche energy | EAS | 9.1 | mJ | VDD = 25 V, Tch = 25 °C (initial state), L = 1 mH, RG = 25 Ω | 2 | ||
| Avalanche current | IAR | 3.5 | A | 2 | |||
| Channel temperature | Tch | 175 | °C | 2 | |||
| Storage temperature | Tstg | -55 | 175 | °C | 2 | ||
| Gate leakage current | IGSS | -10 | 10 | µA | VDS = 0 V, VGS = ±16 V | 3 | |
| Drain cut-off current | IDSS | 10 | µA | VDS = 100 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | ID = 10 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage (VGS = -20 V) | V(BR)DSX | 80 | V | ID = 10 mA, VGS = -20 V | 3 | ||
| Gate threshold voltage | Vth | 1.5 | 2.5 | V | VDS = 10 V, ID = 0.1 mA | 3 | |
| Drain-source on-resistance (VGS = 4.5 V) | RDS(ON) | 65 | 92 | mΩ | ID = 1 A, VGS = 4.5 V | 3 | |
| Drain-source on-resistance (VGS = 10 V) | RDS(ON) | 51 | 69 | mΩ | ID = 2 A, VGS = 10 V | 3 | |
| Diode forward voltage | VDSF | -0.9 | -1.5 | V | ID = -3.5 A, VGS = 0 V | 4 |
CAD (KiCad official)
- Symbol:
SSM3K361R.LF - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
ssm3k361r-lf-etched.step/ssm3k361r-lf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3k361r-lf.step/ssm3k361r-lf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (8 pp, sha256
349f58dbd6cc6709, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).