component
SSM3K333R
Public Made by Adomby adom
TOSHIBA MOSFETs, SOT-23F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| ssm3k333r-etched.glb | 17d ago |
| ssm3k333r-etched.step | 17d ago |
| ssm3k333r-hero.glb | 17d ago |
| ssm3k333r-hero.overlay.json | 17d ago |
| ssm3k333r.glb | 17d ago |
| ssm3k333r.kicad_mod | 17d ago |
| ssm3k333r.kicad_sym | 17d ago |
| ssm3k333r.lbr | 17d ago |
| ssm3k333r.step | 17d ago |
SSM3K333R
TOSHIBA · MOSFETs · SOT-23F
SSM3K333R from TOSHIBA, in a SOT-23F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal, rated for a gate-source voltage VGSS of ±20 V, with gate threshold voltage Vth of 1.3 V to 2.5 V at VDS = 10 V and ID = 0.1 mA. |
| 2 | Source | passive | Source terminal, the reference for the gate-source voltage rating (VGSS ±20 V) and the device is rated for a drain-source voltage VDSS of 30 V. |
| 3 | Drain | passive | Drain terminal, rated for a drain-source voltage VDSS of 30 V and a DC drain current ID of 6 A (pulse 12 A), with channel temperature not to exceed 150 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 30 | V | 1 | |||
| Gate-source voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain current (DC) | ID | 6 | A | Note 1 | 1 | ||
| Drain current (pulse) | IDP | 12 | A | Note 1 | 1 | ||
| Power dissipation | PD | 1 | W | Note 2: FR4 board, Cu pad 645 mm2 | 1 | ||
| Power dissipation | PD | 2 | W | t = 10 s | 1 | ||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | ID = 10 mA, VGS = 0 V | 2 | ||
| Drain-source breakdown voltage | V(BR)DSX | 15 | V | ID = 10 mA, VGS = −20 V | 2 | ||
| Drain cut-off current | IDSS | 1 | μA | VDS = 30 V, VGS = 0 V | 2 | ||
| Gate leakage current | IGSS | -0.1 | 0.1 | μA | VGS = ± 20 V, VDS = 0 V | 2 | |
| Gate threshold voltage | Vth | 1.3 | 2.5 | V | VDS = 10 V, ID = 0.1 mA | 2 | |
| Forward transfer admittance | /Yfs/ | 12 | 24 | S | VDS = 10 V, ID = 5 A (Note 3) | 2 | |
| Drain-source ON-resistance | RDS(ON) | 25.7 | 42 | mΩ | ID = 3.0 A, VGS = 4.5 V (Note 3) | 2 | |
| Drain-source ON-resistance | RDS(ON) | 18.7 | 28 | mΩ | ID = 5.0 A, VGS = 10 V (Note 3) | 2 | |
| Drain-source forward voltage | VDSF | -0.85 | -1.2 | V | ID = -6.0 A, VGS = 0 V (Note 3) | 2 |
CAD (KiCad official)
- Symbol:
SSM3K333R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23F (KiCad packages3D, STEP)
- 3D model files:
ssm3k333r-etched.step/ssm3k333r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3k333r.step/ssm3k333r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (5 pp, sha256
ef8320d6f5cd16d3, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).