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SSM3K333R-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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SSM3K333R-HXY

HXY MOSFET · MOSFETs · SOT-23-3L

SSM3K333R-HXY from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, rated for gate-source voltage of ±20 V and operation with gate voltages as low as 4.5 V.
2 D passive Drain terminal, rated for a drain-source voltage of 30 V and continuous drain current of 5.8 A.
3 S passive Source terminal, the reference for the drain-source diode forward current rated at 5.8 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23-3L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 30 V 1
Gate-source voltage VGS -20 20 V 1
Drain current-continuous ID 5.8 A Tj=125℃ 1
Drain current-pulse IDM 20 A 1
Drain-source diode forward current Is 5.8 A 1
Maximum power dissipation PD 1.4 W 1
Operating junction temperature range Tj -55 150 ℃ 1
Thermal resistance junction-to-ambient Rth JA 100 ℃/W 1
Drain-source breakdown voltage BVDSS 30 V VGS=0V, ID=250µA 2
Zero gate voltage drain current IDSS 1 µA VDS=30V, VGS=0V 2
Gate-body leakage IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate threshold voltage VGS(th) 0.8 1.4 2.2 V VDS=VGS, ID=250µA 2
Drain-source on-state resistance RDS(ON) 24 28 mΩ VGS=10V, ID=5A 2
Drain-source on-state resistance RDS(ON) 26 32 mΩ VGS=4.5V, ID=4A 2
Forward transconductance gfs 33 S VGS=5V, ID=5A 2
Input capacitance CISS 255 pF VDS=15V, VGS=0V, f=1.0MHz 2
Output capacitance COSS 45 pF VDS=15V, VGS=0V, f=1.0MHz 2
Reverse transfer capacitance CRSS 35 pF VDS=15V, VGS=0V, f=1.0MHz 2
Turn-on delay time tD(ON) 4.5 ns VDS=15V, VGS=10V, RL=2.6 ohm, RGEN=3ohm 2
Rise time tr 2.5 ns VDS=15V, VGS=10V, RL=2.6 ohm, RGEN=3ohm 2
Turn-off delay time tD(OFF) 14.5 ns VDS=15V, VGS=10V, RL=2.6 ohm, RGEN=3ohm 2
Fall time tf 3.5 ns VDS=15V, VGS=10V, RL=2.6 ohm, RGEN=3ohm 2
Total gate charge Qg 5.2 nC VDS=15V, ID=5.8A, VGS=10V 2
Gate-source charge Qgs 0.85 nC VDS=15V, ID=5.8A, VGS=10V 2
Gate-drain charge Qgd 1.3 nC VDS=15V, ID=5.8A, VGS=10V 2
Diode forward voltage VSD 0.76 1.16 V VGS=0V, Is=1A 2

CAD (KiCad official)

  • Symbol: SSM3K333R-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: ssm3k333r-hxy-etched.step / ssm3k333r-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssm3k333r-hxy.step / ssm3k333r-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 592cc7ae253f9c5a, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF