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SSM3K2615R

Public Made by Adom

by adom

TOSHIBA MOSFETs, SOT-23F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SSM3K2615R

TOSHIBA · MOSFETs · SOT-23F

SSM3K2615R from TOSHIBA, in a SOT-23F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; rated for gate-source voltage VGSS of ±20 V (absolute maximum) and designed for 3.3-V gate drive.
2 Source passive Source terminal of the N-channel MOSFET, serving as the reference for gate-source voltage; the datasheet gives no separate pin-specific limit.
3 Drain passive Drain terminal of the N-channel MOSFET; drain-source voltage VDSS is rated at 60 V (absolute maximum) and DC drain current ID at 2 A.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package SOT-23F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 60 V 2
Gate-source voltage VGSS -20 20 V 2
Drain current (DC) ID 2 A 2
Drain current (pulsed) IDP 6 A Note 2: Pulse width (PW) ≤ 10 µs, duty ≤ 1% 2
Power dissipation PD 1 W Note 3: FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad 645 mm2) 2
Power dissipation PD 2 W t = 10 s; Note 3: FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad 645 mm2) 2
Channel temperature Tch 150 °C 2
Single-pulse avalanche energy EAS 52.9 mJ VDD = 25 V, Tch = 25 °C, L = 20 mH, RG = 25 Ω, IAR = 2 A (Note 4) 2
Avalanche current IAR 2 A 2
Storage temperature Tstg -55 150 °C 2
Gate leakage current IGSS -10 10 µA VGS = ±16 V, VDS = 0 V 3
Drain cut-off current IDSS 1 µA VDS = 60 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 60 V ID = 10 mA, VGS = 0 V 3
Gate threshold voltage Vth 0.8 2 V VDS = 10 V, ID = 1 mA 3
Drain-source on-resistance RDS(ON) 0.38 0.58 Ω ID = 0.5 A, VGS = 3.3 V 3
Drain-source on-resistance RDS(ON) 0.33 0.44 Ω ID = 1.0 A, VGS = 4.0 V 3
Drain-source on-resistance RDS(ON) 0.23 0.3 Ω ID = 1.0 A, VGS = 10 V 3
Forward transfer admittance /Yfs/ 1 2 S VDS = 10 V, ID = 1.0 A 3
Reverse drain current (DC) IDR 2 A 4
Reverse drain current (pulsed) IDRP 6 A 4
Diode forward voltage VDSF -0.9 -1.5 V ID = -2.0 A, VGS = 0 V 4

CAD (KiCad official)

  • Symbol: SSM3K2615R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23F (KiCad packages3D, STEP)
  • 3D model files: ssm3k2615r-etched.step / ssm3k2615r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssm3k2615r.step / ssm3k2615r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (9 pp, sha256 5248662aeabead64, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF