component
SSM3K16FV
Public Made by Adomby adom
TOSHIBA MOSFETs, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SSM3K16FV
TOSHIBA · MOSFETs · SOT-723
SSM3K16FV from TOSHIBA, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage limited to ±10 V (VGSS) with Vth of 0.6 to 1.1 V at VDS = 3 V, ID = 0.1 mA. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET; Drain-Source voltage rating of 20 V and DC drain current of 100 mA (200 mA pulsed). |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET; Drain-Source voltage up to 20 V, DC drain current 100 mA, pulse 200 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-723 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -1 | 1 | μA | VGS = ±10 V, VDS = 0 | 2 | |
| Drain-Source breakdown voltage | V(BR)DSS | 20 | V | ID = 0.1 mA, VGS = 0 | 2 | ||
| Drain cut-off current | IDSS | 1 | μA | VDS = 20 V, VGS = 0 | 2 | ||
| Gate threshold voltage | Vth | 0.6 | 1.1 | V | VDS = 3 V, ID = 0.1 mA | 2 | |
| Forward transfer admittance | /Yfs/ | 40 | mS | VDS = 3 V, ID = 10 mA | 2 | ||
| Drain-Source on-resistance | RDS(ON) | 1.5 | 3 | Ω | ID = 10 mA, VGS = 4 V | 2 | |
| Drain-Source on-resistance | RDS(ON) | 2.2 | 4 | Ω | ID = 10 mA, VGS = 2.5 V | 2 | |
| Drain-Source on-resistance | RDS(ON) | 5.2 | 15 | Ω | ID = 1 mA, VGS = 1.5 V | 2 | |
| Drain-Source voltage | VDS | 20 | V | Ta = 25°C | 1 | ||
| Gate-Source voltage | VGSS | -10 | 10 | V | Ta = 25°C | 1 | |
| Drain current DC | ID | 100 | mA | Ta = 25°C | 1 | ||
| Drain current pulse | IDP | 200 | mA | Ta = 25°C | 1 | ||
| Drain power dissipation | PD | 150 | mW | Ta = 25°C, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t) | 1 | ||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Input capacitance | Ciss | 9.3 | pF | VDS = 3 V, VGS = 0, f = 1 MHz | 2 | ||
| Reverse transfer capacitance | Crss | 4.5 | pF | VDS = 3 V, VGS = 0, f = 1 MHz | 2 | ||
| Output capacitance | Coss | 9.8 | pF | VDS = 3 V, VGS = 0, f = 1 MHz | 2 | ||
| Turn-on time | ton | 70 | ns | VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V | 2 | ||
| Turn-off time | toff | 125 | ns | VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V | 2 |
CAD (KiCad official)
- Symbol:
SSM3K16FV - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
ssm3k16fv-etched.step/ssm3k16fv-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3k16fv.step/ssm3k16fv.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (5 pp, sha256
611ef6f1bb99fd25, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SSM3K16FV
**TOSHIBA** · MOSFETs · SOT-723
SSM3K16FV from TOSHIBA, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage limited to ±10 V (VGSS) with Vth of 0.6 to 1.1 V at VDS = 3 V, ID = 0.1 mA. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET; Drain-Source voltage rating of 20 V and DC drain current of 100 mA (200 mA pulsed). |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET; Drain-Source voltage up to 20 V, DC drain current 100 mA, pulse 200 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-723 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -1 | | 1 | μA | VGS = ±10 V, VDS = 0 | 2 |
| Drain-Source breakdown voltage | V(BR)DSS | 20 | | | V | ID = 0.1 mA, VGS = 0 | 2 |
| Drain cut-off current | IDSS | | | 1 | μA | VDS = 20 V, VGS = 0 | 2 |
| Gate threshold voltage | Vth | 0.6 | | 1.1 | V | VDS = 3 V, ID = 0.1 mA | 2 |
| Forward transfer admittance | /Yfs/ | 40 | | | mS | VDS = 3 V, ID = 10 mA | 2 |
| Drain-Source on-resistance | RDS(ON) | | 1.5 | 3 | Ω | ID = 10 mA, VGS = 4 V | 2 |
| Drain-Source on-resistance | RDS(ON) | | 2.2 | 4 | Ω | ID = 10 mA, VGS = 2.5 V | 2 |
| Drain-Source on-resistance | RDS(ON) | | 5.2 | 15 | Ω | ID = 1 mA, VGS = 1.5 V | 2 |
| Drain-Source voltage | VDS | | | 20 | V | Ta = 25°C | 1 |
| Gate-Source voltage | VGSS | -10 | | 10 | V | Ta = 25°C | 1 |
| Drain current DC | ID | | | 100 | mA | Ta = 25°C | 1 |
| Drain current pulse | IDP | | | 200 | mA | Ta = 25°C | 1 |
| Drain power dissipation | PD | | | 150 | mW | Ta = 25°C, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t) | 1 |
| Channel temperature | Tch | | | 150 | °C | | 1 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 1 |
| Input capacitance | Ciss | | 9.3 | | pF | VDS = 3 V, VGS = 0, f = 1 MHz | 2 |
| Reverse transfer capacitance | Crss | | 4.5 | | pF | VDS = 3 V, VGS = 0, f = 1 MHz | 2 |
| Output capacitance | Coss | | 9.8 | | pF | VDS = 3 V, VGS = 0, f = 1 MHz | 2 |
| Turn-on time | ton | | 70 | | ns | VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V | 2 |
| Turn-off time | toff | | 125 | | ns | VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V | 2 |
## CAD (KiCad official)
- Symbol: `SSM3K16FV`
- Footprint: `Package_TO_SOT_SMD:SOT-723`
- 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `ssm3k16fv-etched.step` / `ssm3k16fv-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm3k16fv.step` / `ssm3k16fv.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](docs/ssm3k16fv-datasheet.pdf) (5 pp, sha256 `611ef6f1bb99fd25`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ssm3k16fv-datasheet.pdf)