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SSM3J375F

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by adom

TOSHIBA MOSFETs, TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SSM3J375F

TOSHIBA · MOSFETs · TO-236-3(SOT-23-3)

SSM3J375F from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel MOSFET, rated -8/+6 V gate-source (VGSS) with 1.5-V drive capability.
2 Source passive Source terminal of the P-channel MOSFET, with drain-source voltage rated -20 V and DC drain current -2.0 A.
3 Drain passive Drain terminal of the P-channel MOSFET, with VDSS of -20 V, DC drain current of -2.0 A and pulsed drain current of -4.0 A.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TO-236-3(SOT-23-3)
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate leakage current IGSS -1 1 µA VGS = -8/+6 V, VDS = 0 V 3
Drain cut-off current IDSS -1 µA VDS = -20 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS -20 V ID = -1 mA, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSX -15 V ID = -1 mA, VGS = 5 V 3
Gate threshold voltage Vth -0.3 -1 V VDS = -3 V, ID = -1 mA 3
Drain-source on-resistance RDS(ON) 123 150 mΩ ID = -1.0 A, VGS = -4.5 V 3
Drain-source on-resistance RDS(ON) 143 179 mΩ ID = -0.6 A, VGS = -2.5 V 3
Drain-source on-resistance RDS(ON) 170 231 mΩ ID = -0.4 A, VGS = -1.8 V 3
Drain-source on-resistance RDS(ON) 192 311 mΩ ID = -0.2 A, VGS = -1.5 V 3
Forward transfer admittance /Yfs/ 2.2 4.4 S VDS = -3 V, ID = -1.0 A 3
Diode forward voltage VDSF 0.97 1.2 V ID = 2.0 A, VGS = 0 V 4
Drain-source voltage VDSS -20 V Ta = 25°C 2
Gate-source voltage VGSS -8 6 V Ta = 25°C 2
Drain current (DC) ID -2 A Ta = 25°C 2
Drain current (pulsed) IDP -4 A PW ≤ 1 ms, duty ≤ 1% 2
Power dissipation PD 600 mW FR4 board 25.4 x 25.4 x 1.6 mm, Cu pad 645 mm2 2
Power dissipation (t ≤ 1 s) PD 1200 mW t ≤ 1 s, FR4 board 25.4 x 25.4 x 1.6 mm, Cu pad 645 mm2 2
Channel temperature Tch 150 °C 2
Storage temperature Tstg -55 150 °C 2
Input capacitance Ciss 270 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 3
Reverse transfer capacitance Crss 32 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 3
Output capacitance Coss 40 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 3
Turn-on time ton 17 ns VDD = -10 V, ID = -1.0 A, VGS = 0 to -2.5 V, RG = 4.7 Ω 3
Turn-off time toff 43 ns VDD = -10 V, ID = -1.0 A, VGS = 0 to -2.5 V, RG = 4.7 Ω 3
Total gate charge Qg 4.6 nC VDD = -10 V, VGS = -4.5 V, ID = -2.0 A 4
Gate-source charge 1 Qgs1 0.4 nC VDD = -10 V, VGS = -4.5 V, ID = -2.0 A 4
Gate-drain charge Qgd 0.9 nC VDD = -10 V, VGS = -4.5 V, ID = -2.0 A 4

CAD (KiCad official)

  • Symbol: SSM3J375F
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
  • 3D model files: ssm3j375f-etched.step / ssm3j375f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssm3j375f.step / ssm3j375f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (9 pp, sha256 30478cdb902f9fb6, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF