# SSM3J35AMFV

**TOSHIBA** · MOSFETs · SOT-723

SSM3J35AMFV from TOSHIBA, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the P-channel MOSFET, with gate-source voltage limited to ±10 V (VGSS). |
| 2 | Source | passive | Source of the P-channel MOSFET; the drain-source voltage rating is -20 V (VDSS). |
| 3 | Drain | passive | Drain of the P-channel MOSFET, rated for -20 V drain-source voltage and -250 mA DC drain current (ID). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-723 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | -20 | V |  | 2 |
| Gate-source voltage | VGSS | -10 |  | 10 | V |  | 2 |
| Drain current (DC) | ID |  |  | -250 | mA |  | 2 |
| Drain current (pulsed) | IDP |  |  | -600 | mA |  | 2 |
| Power dissipation (Note 2) | PD |  |  | 150 | mW | Note 2: FR4 board 25.4 x 25.4 x 1.6 mm, Cu pad 0.585 mm2 | 2 |
| Power dissipation (Note 3) | PD |  |  | 500 | mW | Note 3: FR4 board 25.4 x 25.4 x 1.6 mm, Cu pad 645 mm2 | 2 |
| Channel temperature | Tch |  |  | 150 | °C |  | 2 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 2 |
| Gate leakage current | IGSS | -1 |  | 1 | µA | VDS = 0 V, VGS = ±10 V | 3 |
| Drain cut-off current | IDSS |  |  | -1 | µA | VDS = -20 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | -20 |  |  | V | ID = -1 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage (V(BR)DSX mode) | V(BR)DSX | -10 |  |  | V | ID = -1 mA, VGS = 10 V | 3 |
| Gate threshold voltage | Vth | -0.3 |  | -1 | V | VDS = -10 V, ID = -100 µA | 3 |
| Drain-source on-resistance | RDS(ON) |  | 3.2 | 4 | Ω | ID = -10 mA, VGS = -1.2 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 2.3 | 2.9 | Ω | ID = -20 mA, VGS = -1.5 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 2 | 2.1 | Ω | ID = -50 mA, VGS = -1.8 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 1.1 | 1.4 | Ω | ID = -150 mA, VGS = -4.5 V | 3 |
| Diode forward voltage | VDSF |  | 0.83 | 1.2 | V | ID = 100 mA, VGS = 0 V | 4 |

## CAD (KiCad official)

- Symbol: `SSM3J35AMFV`
- Footprint: `Package_TO_SOT_SMD:SOT-723`
- 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `ssm3j35amfv-etched.step` / `ssm3j35amfv-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm3j35amfv.step` / `ssm3j35amfv.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590908136209530880) (8 pp, sha256 `dc2e5f6d89a12869`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ssm3j35amfv-datasheet.pdf)