component
SSM3J356R
Public Made by Adomby adom
TOSHIBA MOSFETs, SOT-23F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
| ssm3j356r-etched.glb | 23d ago |
| ssm3j356r-etched.step | 23d ago |
| ssm3j356r-hero.glb | 23d ago |
| ssm3j356r-hero.overlay.json | 23d ago |
| ssm3j356r.glb | 23d ago |
| ssm3j356r.kicad_mod | 23d ago |
| ssm3j356r.kicad_sym | 23d ago |
| ssm3j356r.lbr | 23d ago |
| ssm3j356r.step | 23d ago |
SSM3J356R
TOSHIBA · MOSFETs · SOT-23F
SSM3J356R from TOSHIBA, in a SOT-23F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; the absolute maximum gate-source voltage rating is VGSS = -20/+10 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the source-drain diode forward voltage is VDSF = 0.9 V typ., 1.2 V max. at ID = 2.0 A, VGS = 0 V. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; the absolute maximum drain-source voltage rating is VDSS = -60 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -10 | 10 | µA | VGS = -16 V/+10 V, VDS = 0 V | 3 | |
| Drain cut-off current | IDSS | -10 | µA | VDS = -60 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | -60 | V | ID = -1 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage (DSX mode) | V(BR)DSX | -50 | V | ID = -1 mA, VGS = 10 V | 3 | ||
| Gate threshold voltage | Vth | -0.8 | -2 | V | VDS = -10 V, ID = -1 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 280 | 400 | mΩ | ID = -1.0 A, VGS = -4.0 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 270 | 360 | mΩ | ID = -1.0 A, VGS = -4.5 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 240 | 300 | mΩ | ID = -1.0 A, VGS = -10 V | 3 | |
| Diode forward voltage | VDSF | 0.9 | 1.2 | V | ID = 2.0 A, VGS = 0 V | 4 | |
| Drain-source voltage | VDSS | -60 | V | Ta = 25 °C unless otherwise specified | 2 | ||
| Gate-source voltage | VGSS | -20 | 10 | V | Printed as -20/+10 | 2 | |
| Drain current (DC) | ID | -2 | A | Ta = 25 °C unless otherwise specified | 2 | ||
| Channel temperature | Tch | 150 | °C | 2 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
SSM3J356R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23F (KiCad packages3D, STEP)
- 3D model files:
ssm3j356r-etched.step/ssm3j356r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3j356r.step/ssm3j356r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
2aa985ef85f5554b, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).