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SSM3J355R

Public Made by Adom

by adom

TOSHIBA MOSFETs, SOT-23F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SSM3J355R

TOSHIBA · MOSFETs · SOT-23F

SSM3J355R from TOSHIBA, in a SOT-23F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input MOSFET gate terminal; the device is ESD-sensitive and the gate-source voltage is rated ±10 V (VGSS, absolute maximum).
2 Source passive MOSFET source terminal, the reference for the gate-source voltage; the datasheet notes that a reverse gate-source bias lowers the drain-source breakdown voltage (V(BR)DSX mode).
3 Drain passive MOSFET drain terminal, rated for a drain-source voltage VDSS of -20 V and a DC drain current ID of -6 A (absolute maximum).

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package SOT-23F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS -20 V 2
Gate-source voltage VGSS -10 10 V 2
Drain current (DC) ID -6 A Note 3: device mounted on 25.4 mm x 25.4 mm x 1.6 mm FR4, Cu pad 645 mm2 2
Channel temperature Tch 150 °C Note 1: channel temperature must not exceed 150 2
Storage temperature Tstg -55 150 °C 2
Gate leakage current IGSS -1 1 µA VDS = 0 V, VGS = ±8 V 3
Drain cut-off current IDSS -1 µA VDS = -20 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS -20 V ID = -1 mA, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSX -15 V ID = -1 mA, VGS = 5 V 3
Gate threshold voltage Vth -0.3 -1 V VDS = -3 V, ID = -1 mA 3
Drain-source on-resistance (VGS = -1.8 V) RDS(ON) 36 52.3 mΩ ID = -2.0 A, VGS = -1.8 V 3
Drain-source on-resistance (VGS = -2.5 V) RDS(ON) 28 38.8 mΩ ID = -4.0 A, VGS = -2.5 V 3
Drain-source on-resistance (VGS = -4.5 V) RDS(ON) 23 30.1 mΩ ID = -4.0 A, VGS = -4.5 V 3
Diode forward voltage VDSF 0.83 1.2 V ID = 6 A, VGS = 0 V 4
Forward transfer admittance /Yfs/ 12.8 S VDS = -3 V, ID = -1 A 3
Input capacitance Ciss 1030 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 3
Reverse transfer capacitance Crss 94 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 3
Output capacitance Coss 113 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 3
Switching time (turn-on time) ton 30 ns VDD = -10 V, ID = -1 A, VGS = 0 to -4.5 V, RG = 10 Ω 3
Switching time (turn-off time) toff 320 ns VDD = -10 V, ID = -1 A, VGS = 0 to -4.5 V, RG = 10 Ω 3
Total gate charge (gate-source plus gate-drain) Qg 16.6 nC VDD = -10 V, ID = -6.0 A, VGS = -4.5 V 3
Gate-source charge 1 Qgs1 3 nC VDD = -10 V, ID = -6.0 A, VGS = -4.5 V 3
Gate-drain charge Qgd 3.5 nC VDD = -10 V, ID = -6.0 A, VGS = -4.5 V 3

CAD (KiCad official)

  • Symbol: SSM3J355R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23F (KiCad packages3D, STEP)
  • 3D model files: ssm3j355r-etched.step / ssm3j355r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssm3j355r.step / ssm3j355r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (9 pp, sha256 f9f8fec750b8098d, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF