component
SSM3J334R
Public Made by Adomby adom
TOSHIBA MOSFETs, SOT-23F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SSM3J334R
TOSHIBA · MOSFETs · SOT-23F
SSM3J334R from TOSHIBA, in a SOT-23F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the gate-source voltage VGSS is limited to ±20 V (absolute maximum), and the gate threshold Vth is -0.8 V to -2.0 V at VDS = -10 V, ID = -100 µA. |
| 2 | Source | passive | Source terminal; the drain-source breakdown voltage V(BR)DSS is -30 V minimum at ID = -10 mA, VGS = 0 V, and the drain-source forward voltage VDSF is 1.2 V maximum at ID = 4.0 A, VGS = 0 V. |
| 3 | Drain | passive | Drain terminal; the drain-source voltage VDSS is -30 V and the DC drain current ID is -4 A (pulse IDP -16 A, PW ≤ 1 ms, duty ≤ 1%) as absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23F |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source breakdown voltage | V(BR)DSS | -30 | V | ID = -10 mA, VGS = 0 V | 2 | ||
| Drain-Source breakdown voltage (VGS = 10 V mode) | V(BR)DSX | -21 | V | ID = -10 mA, VGS = 10 V (Note 5) | 2 | ||
| Drain cut-off current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Gate leakage current | IGSS | -10 | 10 | µA | VGS = ±16 V, VDS = 0 V | 2 | |
| Gate threshold voltage | Vth | -0.8 | -2 | V | VDS = -10 V, ID = -100 µA | 2 | |
| Forward transfer admittance | Yfs | 2.3 | 4.6 | S | VDS = -10 V, ID = -1.0 A (Note 4) | 2 | |
| Drain-source ON-resistance | RDS(ON) | 54 | 71 | mΩ | ID = -3.0 A, VGS = -10 V (Note 4) | 2 | |
| Drain-source ON-resistance | RDS(ON) | 80 | 105 | mΩ | ID = -2.0 A, VGS = -4.5 V (Note 4) | 2 | |
| Drain-source ON-resistance | RDS(ON) | 89 | 136 | mΩ | ID = -1.0 A, VGS = -4.0 V (Note 4) | 2 | |
| Drain-source forward voltage | VDSF | 0.9 | 1.2 | V | ID = 4.0 A, VGS = 0 V (Note 4) | 2 | |
| Drain-source voltage | VDSS | -30 | V | 1 | |||
| Gate-source voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain current DC | ID | -4 | A | (Note 1) | 1 | ||
| Drain current pulse | IDP | -16 | A | PW ≤ 1ms, Duty ≤ 1% (Note 1, 2) | 1 | ||
| Power dissipation | PD | 1 | W | (Note 3) mounted on FR4 board, Cu pad 645 mm2 | 1 | ||
| Power dissipation, t < 10 s | PD | 2 | W | t < 10s | 1 | ||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
SSM3J334R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23F (KiCad packages3D, STEP)
- 3D model files:
ssm3j334r-etched.step/ssm3j334r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3j334r.step/ssm3j334r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (6 pp, sha256
7d2cb85dcf187a03, retrieved 2026-10-21, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SSM3J334R
**TOSHIBA** · MOSFETs · SOT-23F
SSM3J334R from TOSHIBA, in a SOT-23F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the gate-source voltage VGSS is limited to ±20 V (absolute maximum), and the gate threshold Vth is -0.8 V to -2.0 V at VDS = -10 V, ID = -100 µA. |
| 2 | Source | passive | Source terminal; the drain-source breakdown voltage V(BR)DSS is -30 V minimum at ID = -10 mA, VGS = 0 V, and the drain-source forward voltage VDSF is 1.2 V maximum at ID = 4.0 A, VGS = 0 V. |
| 3 | Drain | passive | Drain terminal; the drain-source voltage VDSS is -30 V and the DC drain current ID is -4 A (pulse IDP -16 A, PW ≤ 1 ms, duty ≤ 1%) as absolute maximum ratings. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23F |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source breakdown voltage | V(BR)DSS | -30 | | | V | ID = -10 mA, VGS = 0 V | 2 |
| Drain-Source breakdown voltage (VGS = 10 V mode) | V(BR)DSX | -21 | | | V | ID = -10 mA, VGS = 10 V (Note 5) | 2 |
| Drain cut-off current | IDSS | | | -1 | µA | VDS = -30 V, VGS = 0 V | 2 |
| Gate leakage current | IGSS | -10 | | 10 | µA | VGS = ±16 V, VDS = 0 V | 2 |
| Gate threshold voltage | Vth | -0.8 | | -2 | V | VDS = -10 V, ID = -100 µA | 2 |
| Forward transfer admittance | Yfs | 2.3 | 4.6 | | S | VDS = -10 V, ID = -1.0 A (Note 4) | 2 |
| Drain-source ON-resistance | RDS(ON) | | 54 | 71 | mΩ | ID = -3.0 A, VGS = -10 V (Note 4) | 2 |
| Drain-source ON-resistance | RDS(ON) | | 80 | 105 | mΩ | ID = -2.0 A, VGS = -4.5 V (Note 4) | 2 |
| Drain-source ON-resistance | RDS(ON) | | 89 | 136 | mΩ | ID = -1.0 A, VGS = -4.0 V (Note 4) | 2 |
| Drain-source forward voltage | VDSF | | 0.9 | 1.2 | V | ID = 4.0 A, VGS = 0 V (Note 4) | 2 |
| Drain-source voltage | VDSS | -30 | | | V | | 1 |
| Gate-source voltage | VGSS | -20 | | 20 | V | | 1 |
| Drain current DC | ID | -4 | | | A | (Note 1) | 1 |
| Drain current pulse | IDP | -16 | | | A | PW ≤ 1ms, Duty ≤ 1% (Note 1, 2) | 1 |
| Power dissipation | PD | | | 1 | W | (Note 3) mounted on FR4 board, Cu pad 645 mm2 | 1 |
| Power dissipation, t < 10 s | PD | | | 2 | W | t < 10s | 1 |
| Channel temperature | Tch | | | 150 | °C | | 1 |
| Storage temperature range | Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `SSM3J334R`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23F (KiCad packages3D, STEP)
- 3D model files: `ssm3j334r-etched.step` / `ssm3j334r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm3j334r.step` / `ssm3j334r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](docs/ssm3j334r-datasheet.pdf) (6 pp, sha256 `7d2cb85dcf187a03`, retrieved 2026-10-21, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ssm3j334r-datasheet.pdf)