# SSM3J331R

**TOSHIBA** · MOSFETs · SOT-23

SSM3J331R from TOSHIBA, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; the gate-source voltage rating is ±8 V (VGSS), and the device is ESD-sensitive. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the drain-source voltage rating is -20 V (VDSS). |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; the DC drain current rating is -4 A (ID), and the device is mounted on an FR4 board for the stated power dissipation. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | -20 |  |  | V |  | 2 |
| Gate-source voltage | VGSS | -8 |  | 8 | V |  | 2 |
| Drain current (DC) | ID | -4 |  |  | A |  | 2 |
| Channel temperature | Tch |  |  | 150 | °C |  | 2 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 2 |
| Gate leakage current | IGSS | -1 |  | 1 | µA | VGS = ±8 V, VDS = 0 V | 3 |
| Drain cut-off current | IDSS |  |  | -1 | µA | VDS = -20 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | -20 |  |  | V | ID = -1 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage (VGS = 5 V mode) | V(BR)DSX | -15 |  |  | V | ID = -1 mA, VGS = 5 V | 3 |
| Gate threshold voltage | Vth | -0.3 |  | -1 | V | VDS = -3 V, ID = -1 mA | 3 |
| Drain-source on-resistance | RDS(ON) |  | 46 | 55 | mΩ | ID = -3.0 A, VGS = -4.5 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 58 | 75 | mΩ | ID = -3.0 A, VGS = -2.5 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 70 | 100 | mΩ | ID = -1.0 A, VGS = -1.8 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 85 | 150 | mΩ | ID = -0.5 A, VGS = -1.5 V | 3 |
| Forward transfer admittance | /Yfs/ | 3.6 | 7.2 |  | S | VDS = -3 V, ID = -1.0 A | 3 |
| Diode forward voltage | VDSF |  | 0.86 | 1.2 | V | ID = 4.0 A, VGS = 0 V | 4 |

## CAD (KiCad official)

- Symbol: `SSM3J331R`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ssm3j331r-etched.step` / `ssm3j331r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm3j331r.step` / `ssm3j331r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590234113761849344) (9 pp, sha256 `2bce6e1fbc50571d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ssm3j331r-datasheet.pdf)