# SSM3J328R

**TOSHIBA** · MOSFETs · SOT-23F

SSM3J328R from TOSHIBA, in a SOT-23F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±8 V (VGSS), and the datasheet notes VGS(off) must stay below Vth (-0.3 V to -1.0 V) for normal switching. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -20 V (VDSS) with a DC drain current of -6.0 A. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -20 V (VDSS) and a DC drain current of -6.0 A, with a channel temperature not to exceed 150 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23F |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | -20 |  |  | V |  | 1 |
| Gate-source voltage | VGSS | -8 |  | 8 | V |  | 1 |
| Drain current DC | ID | -6 |  |  | A | Note 1 | 1 |
| Drain current pulse | IDP | -24 |  |  | A | Note 1,2: PW ≤ 10μs, Duty ≤ 1% | 1 |
| Power dissipation | PD |  |  | 1 | W | Note 3 | 1 |
| Power dissipation | PD |  |  | 2 | W | t = 10 s | 1 |
| Channel temperature | Tch |  |  | 150 | °C |  | 1 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 1 |
| Drain-source breakdown voltage | V (BR) DSS | -20 |  |  | V | ID = -1 mA, VGS = 0 V | 2 |
| Drain-source breakdown voltage (V(BR)DSX mode) | V (BR) DSX | -15 |  |  | V | ID = -1 mA, VGS = 5 V (Note 5) | 2 |
| Drain cut-off current | IDSS |  |  | -1 | μA | VDS = -20 V, VGS = 0 V | 2 |
| Gate leakage current | IGSS | -1 |  | 1 | μA | VGS = ±8 V, VDS = 0 V | 2 |
| Gate threshold voltage | Vth | -0.3 |  | -1 | V | VDS = -3 V, ID = -1 mA | 2 |
| Forward transfer admittance | /Yfs/ | 4.5 | 9.1 |  | S | VDS = -3 V, ID = -1.0 A (Note 4) | 2 |
| Drain-source ON-resistance | RDS (ON) |  | 24.9 | 29.8 | mΩ | ID = -3.0 A, VGS = -4.5 V (Note 4) | 2 |
| Drain-source ON-resistance | RDS (ON) |  | 31.1 | 39.7 | mΩ | ID = -2.5 A, VGS = -2.5 V (Note 4) | 2 |
| Drain-source ON-resistance | RDS (ON) |  | 38.8 | 56 | mΩ | ID = -1.5 A, VGS = -1.8 V (Note 4) | 2 |
| Drain-source ON-resistance | RDS (ON) |  | 47.4 | 88.4 | mΩ | ID = -0.5 A, VGS = -1.5 V (Note 4) | 2 |
| Drain-source forward voltage | VDSF |  | 0.87 | 1.2 | V | ID = 6.0 A, VGS = 0 V (Note 4) | 2 |

## CAD (KiCad official)

- Symbol: `SSM3J328R`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23F (KiCad packages3D, STEP)
- 3D model files: `ssm3j328r-etched.step` / `ssm3j328r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm3j328r.step` / `ssm3j328r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8576901365240815616) (6 pp, sha256 `e9b7b1503aef6e7d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ssm3j328r-datasheet.pdf)