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SSM3J328R-HXY

HXY MOSFET · MOSFETs · SOT-23

SSM3J328R-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; absolute maximum gate-source voltage is ±12 V and VGS(th) is -0.45 to -1.0 V at ID=-250μA.
2 S passive Source of the P-channel MOSFET; body diode forward current IS is 1.6 A max with VSD of -1.2 V max.
3 D passive Drain of the P-channel MOSFET; VDS is -20 V max, continuous ID is -6.5 A and pulsed IDM is -15 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain Current-Continuous ID -6.5 A 1
Drain Current-Pulsed IDM -15 A Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Maximum Power Dissipation PD 2 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 74 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±8V,VDS=0V 2
Gate Threshold Voltage VGS(th) -0.45 -0.7 -1 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 20 28 mΩ VGS=-4.5V, ID=-4.1A 2
Drain-Source On-State Resistance RDS(ON) 27 36 mΩ VGS=-2.5V, ID=-3A 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-1.6A 2
Diode Forward Current IS 1.6 A Note 2: surface mounted on FR4 board, t ≤ 10 sec 2

CAD (KiCad official)

  • Symbol: SSM3J328R-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ssm3j328r-hxy-etched.step / ssm3j328r-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssm3j328r-hxy.step / ssm3j328r-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 a1e343653907529a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF