# SSM3J327R

**TOSHIBA** · MOSFETs · SOT-23F

SSM3J327R from TOSHIBA, in a SOT-23F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate terminal; the gate-source voltage is rated at ±8 V (VGSS) in the absolute maximum ratings. |
| 2 | Source | passive | MOSFET source terminal; the datasheet gives no separate electrical limit for this pin beyond the device ratings. |
| 3 | Drain | passive | MOSFET drain terminal; the drain-source voltage is rated at -20 V (VDSS) and the DC drain current at -3.9 A (Note 3, FR4 board). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23F |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGSS | -8 |  | 8 | V |  | 2 |
| Drain-source voltage | VDSS |  |  | -20 | V |  | 2 |
| Drain current (DC) | ID |  |  | -3.9 | A | Note 3: device mounted on FR4 board | 2 |
| Drain current (pulsed) | IDP |  |  | -7.812 | A | Note 2: pulse width <=10 ms, duty <=1% | 2 |
| Channel temperature | Tch |  |  | 150 | °C |  | 2 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 2 |
| Gate leakage current | IGSS | -1 |  | 1 | µA | VDS = 0 V, VGS = ±8 V | 3 |
| Drain cut-off current | IDSS |  |  | -1 | µA | VDS = -20 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | -20 |  |  | V | ID = -1 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage (VGS applied) | V(BR)DSX | -15 |  |  | V | ID = -1 mA, VGS = 5 V | 3 |
| Gate threshold voltage | Vth | -0.3 |  | -1 | V | VDS = -3 V, ID = -1 mA | 3 |
| Drain-source on-resistance | RDS(ON) |  | 78.5 | 93 | mΩ | ID = -1.5 A, VGS = -4.5 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 97.5 | 123 | mΩ | ID = -1.0 A, VGS = -2.5 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 120 | 168 | mΩ | ID = -0.5 A, VGS = -1.8 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 141 | 240 | mΩ | ID = -0.25 A, VGS = -1.5 V | 3 |
| Forward transfer admittance | /Yfs/ | 2.8 | 5.6 |  | S | VDS = -3 V, ID = -1.0 A | 3 |
| Diode forward voltage | VDSF |  | 0.97 | 1.2 | V | ID = 3.9 A, VGS = 0 V | 4 |

## CAD (KiCad official)

- Symbol: `SSM3J327R`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23F (KiCad packages3D, STEP)
- 3D model files: `ssm3j327r-etched.step` / `ssm3j327r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm3j327r.step` / `ssm3j327r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590908366800052224) (9 pp, sha256 `c00878e1e317eacb`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ssm3j327r-datasheet.pdf)